Abstract:We report the realization of a dislocation prevention and thermal transport network by adopting carbon nanotube (CNT) films on a commercially available patterned sapphire substrate (PSS), using which a high-quality gallium nitride (GaN) epilayer and a device with improved thermal performance are achieved at the same time. High fill factor CNT films with easy accessibility are lifted above the sapphire patterns and introduce a second selective area growth subsequent to the micron-scale selective area growth on PSS, leading to a further reduction in threading dislocation density (TDD) without involving any regrowth process. Under this dislocation prevention effect, the TDD of the GaN epilayer dropped to 3.5 × 107 cm–2 consequently, which is 78% lower than that on PSS. A thermal transporting network of CNTs with high axial thermal conductivity is simultaneously established, contributing to the great improvement in the thermal performance of the near-ultraviolet light-emitting diode (LED) fabricated subsequently. As a result, an 89% increase in saturation light output power and a 55.5% enhancement in internal quantum efficiency were acquired. We thus believe that this convenient yet effective method will be a competitive solution for short-wavelength LED devices that require high efficiency and long lifetime.

Green light-emitting diodes with improved efficiency by an in situ C-doping GaN current spreading layer

Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Improving the Current Spreading by Fe Doping in n-GaN Layer for GaN-Based Ultraviolet Light-Emitting Diodes

Status of GaN-based green light-emitting diodes*

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer

Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the "green gap"

InGaN/AlGaN DH Green LED\+*

Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer

Characterization of GaInN/GaN layers for green emitting laser diodes

Green Light Emitting Diodes on A-Plane GaN Bulk Substrates

Efficient InGaN-based Yellow-Light-emitting Diodes

Nonpolar M-Plane Thin Film Gan and Ingan/Gan Light-Emitting Diodes on Lialo2(100) Substrates

Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport

Study of a GaN/InGaN-based Light Emitting Diode with an Indium Gallium Oxide Current Blocking Layer, Silver Nanoparticles, and a Gallium Oxide Surface Passivation Layer

Green LED Development in Polar and Non-Polar Growth Orientation

Performance Enhancement of Nitrogen-Polar GaN-based Light-Emitting Diodes Prepared by Metalorganic Chemical Vapor Deposition

Improved Performance Of Gainn Based Deep Green Light Emitting Diodes Through V-Defect Reduction

Performance Improvement of InGaN LEDs by Using Strain Compensated Last Quantum Barrier and Electron Blocking Layer

Efficient Dislocation Prevention and Thermal Transport Network Constructed by CNT Films on PSS for GaN-Based UV LEDs