Abstract:We numerically investigated the optical/electrical characteristics of blue light-emitting-diodes (LEDs) and developed some optimization strategies. Our aim is to increase the optical performance of LEDs at low current density (0.02–2 A cm−2) for micro-LEDs used in display applications. First, we investigated the effects of quantum well (QW) number in blue In0.225Ga0.775N/In0.10Ga0.90N LEDs. We found that at low current density LEDs with lower QW number have much higher internal quantum efficiency (IQE) than those with higher QW number. Second, we also numerically investigated the effects of the electron blocking layer, n-side quantum barrier (QB) doping concentration, QB material and QW width with single quantum well (SQW) structure. For SQW LEDs at low current density, the electron injection efficiency was nearly one. In terms of the QB doping concentration, we found that an appropriate n-side QB doping can ensure Shockley-Read-Hall recombination appropriately equal Auger recombination, which ultimately results in high IQE. For QB material, we choose In0.05Ga0.95N as QB material to achieve both high IQE and low forward voltage. Regarding the QW width, we found that although LEDs with wide QW had high IQE, there were also two peaks in the electroluminescence (EL) spectrum, thus 3 nm was used as an optimal QW width. The original 5-QW structure showed a lower IQE range from 50 to 80% at the current density range from 0.01 to 2 A cm−2 and a forward voltage of 3.06 V at 1 A cm−2. In contrast, our optimized LED structure achieved an IQE of 92.3% at the current density range from 0.01 to 2 A cm−2 and a forward voltage of 2.72 V at 1 A/cm2.

Status of GaN-based green light-emitting diodes*

Research and Recent Progress in GaN-based Semiconductor LED

Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport

Internal quantum efficiency improvement of InGaN/GaN multiple quantum well green light-emitting diodes

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

Improvement in Quantum Efficiency of Green GaN-based Micro-Led by Trapezoidal Quantum Well

Study on Optical Properties and Internal Quantum Efficiency Measurement of GaN-based Green LEDs

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Efficient InGaN-based Yellow-Light-emitting Diodes

Green InGaN/GaN based LEDs: high luminance and blue shift

InGaN/AlGaN DH Green LED\+*

A Simulation Study on the Enhancement of the Efficiency of GaN-based Blue Light-Emitting Diodes at Low Current Density for Micro-Led Applications

Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the "green gap"

Green InGaN/GaN LEDs: High luminance and blue shift

Analysis of the Quantum Efficiency of Gainn/Gan Light Emitting Diodes in the Range of 390-580 Nm

Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer

Recent Advances on GaN-Based Micro-LEDs

High efficiency InGaN nanowire tunnel junction green micro-LEDs

Effect of AlGaN interlayer in bottom quantum barriers on efficiency enhancement of InGaN green light-emitting diodes

Green LED Development in Polar and Non-Polar Growth Orientation

Design and Growth of GaN-based Blue and Green Laser Diodes