Abstract:<p>Gallium nitride (GaN) is a promising semiconductor for the fabrication of a wide range of electronic and optoelectronic devices. For GaN grown on widely used sapphire substrate, bundles of threading dislocations (TDs) are induced by thermal and lattice mismatch. These TDs intersect the surface of GaN and degrade the internal quantum efficiency (IQE) of GaN-based devices. To address this issue, two innovative techniques are proposed for effective filtration of TDs. First, a novel design of serpentine channel pattern sapphire substrate (SCPSS) is applied for effective filtration of TDs at the interface. Transmission electron microscopy (TEM) indicated that SCPSS plays an effective role in the filtration of TDs; however, cathodoluminescence (CL) revealed that many TDs still intersect the surface of GaN. To further optimize the growth of GaN, the temperature was ramped down to the intermediate level and an interlayer (IL) of InGaN was introduced near the window of SCPSS. CL analysis indicated that additional use of InGaN-IL further reduced the TDs. Raman microscopy showed that incorporation of IL lead to drastic reduction in compressive stress. Atomic force microscopy (AFM) confirmed the achievement of excellent surface topography with InGaN-IL. Moreover, it is observed that growth of GaN by SCPSS is better than conventional growth because of improved surface morphology and low TDs. The reduction of TDs by SCPSS and InGaN-IL is an effective approach for the growth of high-quality GaN towards efficient devices.</p>

Efficient Dislocation Prevention and Thermal Transport Network Constructed by CNT Films on PSS for GaN-Based UV LEDs

High-performance Near-Uv LED Grown by Carbon Nanotube Assisted Nanoheteroepitaxy

Modulating lateral strain in GaN-based epitaxial layers by patterning sapphire substrates with aligned carbon nanotube films

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

High quality GaN epilayers grown on carbon nanotube patterned sapphire substrate by metal-organic vapor phase epitaxy

High-Efficiency, Microscale Gan Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching

Enhancement of Heat Dissipation in Ultraviolet Light‐Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer

Carbon Nanotube Assisted Lift off of GaN Layers on Sapphire

High quality AlN film assisted by graphene/sputtered AlN buffer layer for deep-ultraviolet-LED

High‐Brightness Blue Light‐Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer

Impact of Carbon Nanotube Pattern Layers on Gallium Nitride-Based Light Emitting Diodes

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Coordinated Stress Management and Dislocation Control in GaN Growth on Si (111) Substrates by Using a Carbon Nanotube Mask.

Breaking the Transverse Magnetic-Polarized Light Extraction Bottleneck of Ultraviolet-C Light-Emitting Diodes Using Nanopatterned Substrates and an Inclined Reflector

Enhanced Performance of InGaN Light-Emitting Diodes Via High-Quality GaN and Embedded Air Voids Grown on Hexagonal 3D Serpentine Mask Sapphire Substrates

Growth and Characterization of Micro-LED Based on GaN Substrate

Nanoimprinted patterned sapphire with silica array for efficient InGaN-based green mini-LEDs

High-efficiency Green Micro-Leds with GaN Tunnel Junctions Grown Hybrid by PA-MBE and MOCVD

Reduction of threading dislocations in GaN grown on patterned sapphire substrate masked with serpentine channel

Enhanced performance of GaN-based LEDs via electroplating of a patterned copper layer on the backside