Abstract:This study analyzes optical confinement factor and light emitting mode order for three different GaN LEDs: a conventional LED, thin Film LED, and thin Film LED with a photonic crystal (PhC) grating. For the first structure, we increase the thickness of AlxGa1-xN from 0 to 600nm, alter the x composition in AlxGa1-xN from 0.05 to 0.2 in steps of 0.05, and adjust the p-GaN and n-GaN thicknesses each from 0 to 200nm. For the second structure, we alter the n-GaN substrate thickness from 300-1000nm in steps of 100nm and 1000-4000nm in steps of 1000nm. These simulations show that increasing the substrate thickness causes the light emitting mode order to increase. The higher the mode, the more current is needed to make the device emit light. Higher current leads to shorter device lifetime. The last structure contains a photonic crystal grating with a period T = 100nm, 230nm, 460nm, 690nm, 920nm, 1500nm, 2000nm, 3000nm and 50% duty cycle. For each grating period, we display the effects on optical confinement factor and optical field intensity. The results show that changing the grating period does not affect the mode order, but does affect the optical field intensity. A larger grating period corresponds to lower optical field intensity. Maximizing optical field intensity increases the brightness of the device. The simulation method above can be used to improve the efficiency, brightness, and lifetime of GaN LEDs by reducing the effects of transverse mode coupling and maximizing the optical field intensity.

Impact of Carbon Nanotube Pattern Layers on Gallium Nitride-Based Light Emitting Diodes

High quality GaN epilayers grown on carbon nanotube patterned sapphire substrate by metal-organic vapor phase epitaxy

Modulating lateral strain in GaN-based epitaxial layers by patterning sapphire substrates with aligned carbon nanotube films

Effect of Carbon Nanotube Pattern on the Laser Lift off and Quantum Efficiencies of Near UV Vertical LEDs

Efficient Dislocation Prevention and Thermal Transport Network Constructed by CNT Films on PSS for GaN-Based UV LEDs

The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

High-output power GaN-LED based on surface plasmon enhancement

Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching

Optical Mode Pattern Study of GaN LEDs with and Without Top Nano-Gratings

Study of Carbon Nanotubes As Etching Masks and Related Applications in the Surface Modification of GaAs-based Light-Emitting Diodes

Parameters optimization of nanopatterned sapphire substrates for enhancing light extraction efficiency of GaN-based LEDs

Enhanced performance of GaN-based LEDs via electroplating of a patterned copper layer on the backside

Analyses of Light Extraction Efficiency in GaN‐based LEDs Grown on Patterned Sapphire Substrates

Defect Structure and Evolution of GaN-Based Light-Emitting Diodes on Planar and Cone-Patterned Sapphire Substrates

Carbon Nanotube Assisted Lift off of GaN Layers on Sapphire

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

Light extraction enhancement of light-emitting diodes by nanopillar hierarchical structures

High-performance Near-Uv LED Grown by Carbon Nanotube Assisted Nanoheteroepitaxy

Design of patterned sapphire substrates for GaN-based light-emitting diodes

Light Extraction Improvement of Gan-Based Light Emitting Diodes Using Patterned Undoped Gan Bottom Reflection Gratings

[Optical Characteristics of InGaN/GaN Light Emitting Diodes on Patterned Sapphire Substrate].