Abstract:The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes (LEDs) have emerged as promising candidates for achieving high efficiency and high intensity, and have received increasing attention among many researchers in this field. In this paper, we use a self-assembled array-patterned mask to fabricate InGaN/GaN multi-quantum well (MQW) LEDs with the intention of enhancing the light-emitting efficiency. By utilizing inductively coupled plasma etching with a self-assembled Ni cluster as the mask, nanopillar arrays are formed on the surface of the InGaN/GaN MQWs. We then observe the structure of the nanopillars and find that the V-defects on the surface of the conventional structure and the negative effects of threading dislocation are effectively reduced. Simultaneously, we make a comparison of the photoluminescence (PL) spectrum between the conventional structure and the nanopillar arrays, achieved under an experimental set-up with an excitation wavelength of 325 mm. The analysis demonstrates that MQW-LEDs with nanopillar arrays achieve a PL intensity 2.7 times that of conventional LEDs. In response to the PL spectrum, some reasons are proposed for the enhancement in the light-emitting efficiency as follows: 1) the improvement in crystal quality, namely the reduction in V-defects; 2) the roughened surface effect on the expansion of the critical angle and the attenuated total reflection; and 3) the enhancement of the light-extraction efficiency due to forward scattering by surface plasmon polariton modes in Ni particles deposited above the p-type GaN layer at the top of the nanopillars.

Study of Carbon Nanotubes As Etching Masks and Related Applications in the Surface Modification of GaAs-based Light-Emitting Diodes

Impact of Carbon Nanotube Pattern Layers on Gallium Nitride-Based Light Emitting Diodes

AlGaInP light-emitting diodes with SACNTs as current-spreading layer

Light Extraction Improvement from GaN-Based Light-Emitting Diodes with Nano-Patterned Surface Using Anodic Aluminum Oxide Template

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

Enhancement in the Light Output Power of Gan-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres

High-Efficiency, Microscale Gan Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

Formation of Nanorod InGaN/GaN Multiple Quantum Wells Using Nickel Nano-Masks and Dry Etching for InGaN-based Light-Emitting Diodes

The Enhancement of Light-Emitting Efficiency Using GaN-based Multiple Quantum Well Light-Emitting Diodes with Nanopillar Arrays

Effect of Carbon Nanotube Pattern on the Laser Lift off and Quantum Efficiencies of Near UV Vertical LEDs

Carbon Nanotube Displays

High-performance Near-Uv LED Grown by Carbon Nanotube Assisted Nanoheteroepitaxy

Efficient Dislocation Prevention and Thermal Transport Network Constructed by CNT Films on PSS for GaN-Based UV LEDs

Enhanced Light Extraction Efficiency by Self-Masking Technology with Carbonized Photoresist for Light-Emitting Diodes

Enhancement of Light Output Power from LEDs Based on Monolayer Colloidal Crystal

Enhanced Performance of GaN-Based Single Contact Micro-LED Driven by AC Power Utilizing the Tunnel Junction

Study of GaN-Based LEDs With Hybrid SiO2 Microsphere/Nanosphere AntiReflection Coating as a Passivation Layer by a Rapid Convection Deposition

Fabrication and Improvement of Nanopillar InGaN / GaN Light-Emitting Diodes Using Nanosphere Lithography

Enhancing Light Output of GaN-based Light-Emitting Diodes with Nanoparticle-Assembled On-Top Layers

Nanostructure carbon for FED and white LED application

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure