Abstract:High-performance blue GaN-based light-emitting diodes (LEDs) on Si substrates have been achieved by applying a suitable tensile stress in the underlying n-GaN. It is demonstrated by simulation that tensile stress in the underlying n-GaN alleviates the negative effect from polarization electric fields on multiple quantum wells but an excessively large tensile stress severely bends the band profile of the electron blocking layer, resulting in carrier loss and large electric resistance. A medium level of tensile stress, which ranges from 4 to 5 GPa, can maximally improve the luminous intensity and decrease forward voltage of LEDs on Si substrates. The LED with the optimal tensile stress shows the largest simulated luminous intensity and the smallest simulated voltage at 35 A/cm2. Compared to the LEDs with a compressive stress of −3 GPa and a large tensile stress of 8 GPa, the improvement of luminous intensity can reach 102% and 28.34%, respectively. Subsequent experimental results provide evidence of the superiority of applying tensile stress in n-GaN. The experimental light output power of the LEDs with a tensile stress of 1.03 GPa is 528 mW, achieving a significant improvement of 19.4% at 35 A/cm2 in comparison to the reference LED with a compressive stress of −0.63 GPa. The forward voltage of this LED is 3.08 V, which is smaller than 3.11 V for the reference LED. This methodology of stress management on underlying GaN-based epitaxial films shows a bright feature for achieving high-performance LED devices on Si substrates.

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