Abstract:Owing to high pixel density and brightness, gallium nitride (GaN) based micro-light-emitting diodes (Micro-LEDs) are considered revolutionary display technology and have important application prospects in the fields of micro-display and virtual display. However, Micro-LEDs with pixel sizes smaller than 10 μm still encounter technical challenges such as sidewall damage and limited light extraction efficiency, resulting in reduced luminous efficiency and severe brightness non-uniformity. Here, we reported high-brightness green Micro-displays with a 5 μm pixel utilizing high-quality GaN-on-Si epilayers. Four-inch wafer-scale uniform green GaN epilayer is first grown on silicon substrate, which possesses a low dislocation density of 5.25 × 108 cm-2, small wafer bowing of 16.7 μm, and high wavelength uniformity (standard deviation STDEV < 1 nm), scalable to 6-inch sizes. Based on the high-quality GaN epilayers, green Micro-LEDs with 5 μm pixel sizes are designed with vertical non-alignment bonding technology. An atomic sidewall passivation method combined with wet treatment successfully addressed the Micro-LED sidewall damages and steadily produced nano-scale surface textures on the pixel top, which unlocked the internal quantum efficiency of the high-quality green GaN-on-Si epi-wafer. Ultra-high brightness exceeding 107 cd/m2 (nits) is thus achieved in the green Micro-LEDs, marking the highest reported results. Furthermore, integration of Micro-LEDs with Si-based CMOS circuits enables the realization of green Micro-LED displays with resolution up to 1080 × 780, realizing high-definition playback of movies and images. This work lays the foundation for the mass production of high-brightness Micro-LED displays on large-size GaN-on-Si epi-wafers.

High-efficiency Green Micro-Leds with GaN Tunnel Junctions Grown Hybrid by PA-MBE and MOCVD

Monolithic integration of GaN-based green micro-LED and quasi-vertical MOSFET utilizing a hybrid tunnel junction

High efficiency InGaN nanowire tunnel junction green micro-LEDs

High-temperature Performance of InGaN-based Amber Micro-Light-emitting Diodes Using an Epitaxial Tunnel Junction Contact

Hybrid Tunnel Junction–Graphene Transparent Conductive Electrodes for Nitride Lateral Light Emitting Diodes

High-Efficiency, Microscale Gan Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

Activation of buried p-GaN through nanopipes in large-size GaN-based tunnel junction LEDs

Enhanced Performance of GaN-Based Single Contact Micro-LED Driven by AC Power Utilizing the Tunnel Junction

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

Growth and Characterization of Micro-LED Based on GaN Substrate

Ultra-small InGaN Green Micro-Light-emitting Diodes Fabricated by Selective Passivation of P-Gan

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Tunneling assisted p-contact free GaN-InGaN green light-emitting diodes

Performance evaluation of tunnel junction-based N-polar AlGaN deep-ultraviolet light-emitting diodes

Excavating the Communication Performance in GaN-Based Green Micro-LEDs: Modular-Architectured p-Type Region

Improvement in Quantum Efficiency of Green GaN-based Micro-Led by Trapezoidal Quantum Well

Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers

Recent Progress in III‐Nitride Tunnel Junction Light‐Emitting Diodes

n+/p+ GaN and n+/p+ Al0.10Ga0.90N tunnel junctions: a promising alternative for hole injection in deep ultraviolet light-emitting diodes

High-Efficiency Vertical-Chip Micro-Light-Emitting Diodes via p-GaN Optimization and Surface Passivation