Abstract:Three dimensional integrated circuits (3D ICs) consisted of stacking and vertically interconnecting are an emerging technology with great potential for improving system performance. 3D integration relies on Through Silicon Via (TSV) interconnection and interlayer bonding between the silicon layers. Due to the advantages of higher device density, lesser signal delay, shorter interconnection length and smaller package size, this technology attracts growing attentions. A number of innovative processes contribute to the realization of 3D IC. These include back grinding, coating, cleaning, etching, wafer thinning, filling of high aspect ratio vias with electroplated copper and interlayer bonding, etc. In this work, finite element models for four-layer stacked TSV-based (Through Silicon Via) 3D IC are established based on the heat distribution of working process caused by heat source in device die, in order to investigate the thermal effects and determine the improvements required. The transient temperature fields of 3D IC structures are obtained. The effects of various geometric parameters and thermal properties on the overall temperature have been analyzed. The result indicates that TSV diameter, pitch, BCB thickness and BEOL conductivity play more important roles to the temperature increment and the maximum temperature of no TSV structures is several times of that of TSV-based structures. The copper provides for an effective heat conduction path, and reduces considerably the overall temperature. It is also shown that the heat path from chip to the bottom surface is the main way for the heat dissipation.

Thermal Stress Analysis of Wafer-Level Multilayer Stacking Process for 3D-TSV Packaging

Modeling Simplification for Thermal Mechanical Stress Analysis of TSV Interposer Stack

Finite Element Stress Analysis Of 3d Tsv Stack Subject To Large Temperature Loading

Simulation and Experimental Analysis of Thermomechanical Stress Around Interconnects for W2W Hybrid Bonding

The fatigue failure analysis of 3D SiP with Through Silicon Via

Stress Evolution Mechanism and Thermo-Mechanical Reliability Analysis of Copper-Filled TSV Interposer

The Interfacial Thermo-Mechanical Reliability of 3D Memory-Chip Stacking with Through Silicon Via Array

Thermo-mechanical Reliability Analysis of 3D Stacked-Die Packaging with Through Silicon Via

3D Tcad Modeling for Stress Management in Through Silicon Via (tsv) Stacks

3D Package Thermal Analysis and Thermal Optimization

Thermal Stress Analysis and Design Guidelines for Through Silicon Via Structure in 3D IC Integration

Thermal analysis of four-layer 3D IC with TSVs based on face-to-back bonding

Initial Thermal Stress and Strain Effects on Thermal Mechanical Stability of Through Silicon Via

The thermal stress analysis in 3D IC integration with TSV interposer

Electric-thermo-mechanical Analysis of TSV under High Current Stressing

Stress Analysis and Layout Optimization of Nano-TSV in an Advanced Packaging

Thermomechanical Reliability of a Cu-TSV Integration Model Based on 3D Fabrication Processes

Failure Analysis Examination of the Effect of Thermal Cycling on Copper-filled TSV Interposer Reliability

Thermal–Mechanical Performance Analysis and Structure Optimization of the TSV in 3-D IC

Influences of Size and Material of Through-Silicon Via on Thermo-mechanical Stress

Thermal Analysis of a Face-to-Back Bonded Four-Layer Stacked 3D IC Model