Abstract:With the development of integrated circuit towards the characteristics of the low-power consumption, miniaturization and high integration, three-dimensional integration technology based on Through-Silicon Via (TSV) comes into being. However, the thermal accumulation caused by the maximum stack density and the thermal stress caused by the mismatched thermal expansion coefficient between TSV surrounding materials will lead to the reliability problems such as circuit function failure and device performance drift. In this paper, the heat dissipation performance and thermal-mechanical reliability of TSV array in 2.5D silicon interposer were studied when the operation temperature is increased from 20°C to 100°C. Firstly, the influences of the geometrical parameters, such as the through hole radius, depth to width ratio, insulation thickness and TSV spacing, on thermal-mechanical reliability were analyzed for single TSV, paired TSV and 3*3 TSV array structures. Secondly, a configuration of TSV regular hexagonal array in silicon interposer is proposed to improve its heat dissipation performance.Our simulation results disclose that the stress is mainly concentrated at the junction where SiO2 layer deviates to copper and silicon substrate deviates to SiO2, which indicates the SiO2 layer is most prone to fracture. The through hole radius should be designed as small as possible to reduce the thermal stress, and a thicker SiO2 insulation layer thickness will induce the better thermal-mechanical stability of TSV. The optimized TSV's depth to width ratio should be set above 5 with the simultaneous consideration of the stress for silicon substrate, insulating layer, filled copper. For multiple TSVs, the spacing should be greater than twice the diameter to eliminate the influence of thermal stress between TSVs. In addition, in the case of the same spacing, the equivalent unit temperature of TSV regular hexagonal array distribution is 2.9°C lower than that of conventional matrix array distribution. The analysis and design of TSV array in 2.5D silicon interposer is promising to offer guideline to the future advanced package development.

3D Package Thermal Analysis and Thermal Optimization

Thermal analysis and heat dissipation optimization of 3D packaging with TSV interposer

Thermal Analysis Of 3d Packaging With A Simplified Thermal Resistance Network Model And Finite Element Simulation

Thermal analysis of four-layer 3D IC with TSVs based on face-to-back bonding

Thermal Modeling of a Chiplet-Based Packaging with a 2.5-D Through-Silicon Via Interposer

Exploring modeling and testing approaches for three-dimensional integrated thermal resistance of chiplets

Thermal for 3D stacked modules ?

Finite element numerical simulation analysis of electronic package subjected to thermal loading

Fatigue Behavior of 3D Stacked Packaging Structures under Extreme Thermal Cycling Condition

Numerical Simulation of Reliability of 2.5D/3D Package Interconnect Structure under Temperature Cyclic Load

Thermal Analysis of a Face-to-Back Bonded Four-Layer Stacked 3D IC Model

Thermo-mechanical Reliability Analysis of 3D Stacked-Die Packaging with Through Silicon Via

System-Level Analysis of 3D ICs with Thermal TSVs

Structural integrity optimization of 3D TSV package by analyzing crack behavior at TSV and BEOL

The thermal stress analysis in 3D IC integration with TSV interposer

Thermal-Mechanical Analysis of TSV Array in 2.5D Silicon Interposer

Investigation On The Effect Of Multiple Parameters Towards Thermal Management In 3d Stacked Ics

Stress Analysis and Structural Optimization of 3-D IC Package Based on the Taguchi Method

Efficient Thermal-Stress Coupling Design of Chiplet-Based System with Coaxial TSV Array

Thermal Stress Analysis and Optimization in Stacked Die Package Under Power Load

Thermal Stress Analysis in Package of Power Transistor