Thermal Stress Analysis in Package of Power Transistor

王雪梅,孙学伟,贾松良
DOI: https://doi.org/10.3969/j.issn.1674-4926.2000.04.018
2000-01-01
Abstract:Packaging failure and cracking often occur when the thermomechanical stresses in the layered electronic packaging are large enough. The stresses are formed in the manufacturing process because of the change of temperatures and the thermal mismatch between different materials. Therefore, a method to estimate the thermal stress is needed in the package design. Usually, numerical analysis is convenient and efficient to estimate the stress. A 3D model is provided by this paper to analyze the thermal stress and deformation in the package of power transistor with an ABAQUS finite element program. The calculating results provide a theoretical basis for the improvement of the reliability and the optimization of the package structure.
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