Abstract:With the development of integrated circuit towards the characteristics of the low-power consumption, miniaturization and high integration, three-dimensional integration technology based on Through-Silicon Via (TSV) comes into being. However, the thermal accumulation caused by the maximum stack density and the thermal stress caused by the mismatched thermal expansion coefficient between TSV surrounding materials will lead to the reliability problems such as circuit function failure and device performance drift. In this paper, the heat dissipation performance and thermal-mechanical reliability of TSV array in 2.5D silicon interposer were studied when the operation temperature is increased from 20°C to 100°C. Firstly, the influences of the geometrical parameters, such as the through hole radius, depth to width ratio, insulation thickness and TSV spacing, on thermal-mechanical reliability were analyzed for single TSV, paired TSV and 3*3 TSV array structures. Secondly, a configuration of TSV regular hexagonal array in silicon interposer is proposed to improve its heat dissipation performance.Our simulation results disclose that the stress is mainly concentrated at the junction where SiO2 layer deviates to copper and silicon substrate deviates to SiO2, which indicates the SiO2 layer is most prone to fracture. The through hole radius should be designed as small as possible to reduce the thermal stress, and a thicker SiO2 insulation layer thickness will induce the better thermal-mechanical stability of TSV. The optimized TSV's depth to width ratio should be set above 5 with the simultaneous consideration of the stress for silicon substrate, insulating layer, filled copper. For multiple TSVs, the spacing should be greater than twice the diameter to eliminate the influence of thermal stress between TSVs. In addition, in the case of the same spacing, the equivalent unit temperature of TSV regular hexagonal array distribution is 2.9°C lower than that of conventional matrix array distribution. The analysis and design of TSV array in 2.5D silicon interposer is promising to offer guideline to the future advanced package development.

Thermal analysis of four-layer 3D IC with TSVs based on face-to-back bonding

Thermal Analysis of a Face-to-Back Bonded Four-Layer Stacked 3D IC Model

System-Level Analysis of 3D ICs with Thermal TSVs

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

The thermal stress analysis in 3D IC integration with TSV interposer

Thermal Stress Analysis and Design Guidelines for Through Silicon Via Structure in 3D IC Integration

An Analytical Thermal Model for 3d Integrated Circuit Considering Through Silicon Via

Thermal analysis and heat dissipation optimization of 3D packaging with TSV interposer

Investigation On The Effect Of Multiple Parameters Towards Thermal Management In 3d Stacked Ics

Thermal-Mechanical Analysis of TSV Array in 2.5D Silicon Interposer

An Effective Approach for Thermal Performance Analysis of Three-Dimensional Integrated Circuits with Through-Silicon Vias

A Finite Element Simulation for 3D-IC under Thermal Loads

Thermal Analysis Of 3d Packaging With A Simplified Thermal Resistance Network Model And Finite Element Simulation

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Thermal Characterization of Tsv Array As Heat Removal Element in 3d Ic Stacking

Thermal Performance Analysis of Carbon Materials Based TSV in Three Dimensional Integrated Circuits

Thermal Modeling of a Chiplet-Based Packaging with a 2.5-D Through-Silicon Via Interposer

A Thermal Model for Top Layer of Three-dimensional Integrated Circuits with Through Silicon Via

An Effective Approach for Thermal Performance Analysis of 3-D Integrated Circuits with Through-Silicon Vias

A Full Chip Scale Numerical Simulation Method for Thermal Management of 3D IC

Thermal Management in Fine-Grained 3-D Integrated Circuits