Abstract:We experimentally demonstrate that the dominant mechanism of single-event transients in silicon-germanium heterojunction bipolar transistors (SiGe HBTs) can change with decreasing temperature from +20 °C to −180 °C. This is accomplished by using a new well-designed cryogenic experimental system suitable for a pulsed-laser platform. Firstly, when the temperature drops from +20 °C to −140 °C, the increased carrier mobility drives a slight increase in transient amplitude. However, as the temperature decreases further below −140 °C, the carrier freeze-out brings about an inflection point, which means the transient amplitude will decrease at cryogenic temperatures. To better understand this result, we analytically calculate the ionization rates of various dopants at different temperatures based on Altermatt’s new incomplete ionization model. The parasitic resistivities with temperature on the charge-collection pathway are extracted by a two-dimensional (2D) TCAD process simulation. In addition, we investigate the impact of temperature on the novel electron-injection process from emitter to base under different bias conditions. The increase of the emitter–base junction’s barrier height at low temperatures could suppress this electron-injection phenomenon. We have also optimized the built-in voltage equations of a high current compact model (HICUM) by introducing the impact of incomplete ionization. The present results and methods could provide a new reference for effective evaluation of single-event effects in bipolar transistors and circuits at cryogenic temperatures, and could provide a new evidence of the potential of SiGe technology in applications in extreme cryogenic environments.

Characterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications

DC and low-frequency noise characteristics of GaN-based HEMTs under cryogenic temperatures

Output Phase and Amplitude Analysis of GaN-Based HEMT at Cryogenic Temperatures

Suppressing Temperature Rise in AlGaN/GaN HEMT with Graphene Layers

Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications

Testing and Characterization of GaN-based MOSFET at Space Cryogenic Temperature

Self-assembled monolayer gate doping and their detail deep cryogenic characterization of GaN/Si HEMTs

Cryogenic Overcurrent Characteristic of GaN HEMT and Converter Evaluation

Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si

Unclamped-Inductive-Switching Behaviors of p-GaN HEMTs at Cryogenic Temperature

Cryogenic Characteristics of Ge Channel Junctionless Nanowire Transistors

Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications

Operation of Silicon-Germanium Heterojunction Bipolar Transistors with Different Structures at Deep Cryogenic Temperature.

Roles of Hole Trap on Gate Leakage of p -GaN HEMTs at Cryogenic Temperatures

Cryogenic GaN/AlGaN HEMT ICs and Fabrication Probability of Monolithic Sensor of Super- and Semiconductor Devices

Investigation of Analog/RF behaviour of Asymmetrical Gate Tunnel FET at Cryogenic temperatures

High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate

Cryogenic Investigation of Gate Leakage and RF Performances Down to 50 K of 0.2 Μm AlInAs/GaInAs/InP HEMTs

Low-temperature characteristics and gate leakage mechanisms of LPCVD-SiN<i>x</i>/AlGaN/GaN MIS-HEMTs

Steady-State Temperature-Sensitive Electrical Parameters' Characteristics of GaN HEMT Power Devices

Active Thermal Management of GaN-on-SiC HEMT with Embedded Microfluidic Cooling