Abstract:The principal obstacle to III-V compound semiconductors rivaling or exceeding the properties of Si electronics has been the lack of high-quality, thermodynamically stable insulators on GaAs (or on III-V materials in general). For more than four decades, the research community has searched for suitable III-V compound semiconductor gate dielectrics or passivation layers. The literature testifies to the extent of this effort, with representative, currently active approaches including sulfur passivation , silicon interface control layers (Si ICLs) , in situ molecular beam epitaxy (MBE) growth of Ga2O3(Gd2O3) , ex situ atomic layer deposition (ALD) growth of Al2O3 and HfO2 , wet oxidation of InAlP , jet vapor deposition (JVD) 12 of Si3N4, and ALD or PVD of HfO2 + Si ICL . The research on ALD high-k dielectric is of particular interest, since the Si industry is getting familiar with ALD Hfbased dielectrics and this approach has the potential to become a manufacturable technology. In the past years, we systematically studied the interface properties of ALD high-k dielectrics on GaAs, InGaAs with different In concentrations, InAs, InSb, InP, GaN and GaP using quasi-static CV, low-frequency high-frequency CV, conductance-method, charge pumping, and flatband shift vs. metal workfunction etc. approaches. The results show the Fermi-level in GaAs is not absolutely pinned at the mid-gap as Spicer model proposes. It can move almost across the whole bandgap with ~70% modulation efficiency. However, due to the wide bandgap of GaAs, existing interface traps and low density of states in GaAs, only weak inversion could be realized at ALD Al2O3/GaAs interface. This fact explains the observed inversion feature in quasi-static CV measurement at room temperature and in dark. It also explains why only low drain currents are obtained in inversion GaAs NMOSFETs and PMOSFETs using ALD Al2O3 as high-k dielectrics. Fermi-level in In-rich InGaAs is totally unpinned and strong inversion is realized as well as large drain current in inversion NMOSFETs. We also review detailed C-V and conductance-method measurements on high temperature annealed ALD Al2O3 dielectrics on GaAs and InGaAs and I-V characterization on fabricated enhancement-mode (E-mode) GaAs and InGaAs MOSFETs where the inversion channels are directly formed at the Al2O3/GaAs and Al2O3/InGaAs interfaces.

In Situ Isotope Study of Indium Diffusion in InP/Al2O3 Stacks

In situ isotope study of indium diffusion in InP/Al 2 O 3 stacks

The Photoemission Study of InSb/HfO2 Stacks Upon N2 Rapid Thermal Annealing

Effects of Buried Oxide Layer on Indium Diffusion in Separation by Implantation of Oxygen

High-performance Inversion-mode High-k/InGaAs MOSFETs and Their Interface Studies - Invited

Unraveling the Mechanism of Remote Scavenging Effect at the InP/Al 2 O 3 Interface Induced by Titanium Layer

New Insights in the Passivation of High-K/inp Through Interface Characterization and Metal–oxide–semiconductor Field Effect Transistor Demonstration: Impact of Crystal Orientation

Electron Energy Loss Spectroscopy, Low Energy Electron Diffraction, and Auger Electron Spectroscopy Study of Indium Overlayers on Si(111) and Si(100) Surfaces

Implant Damage and Redistribution of Indium in Indium-Implanted Thin Silicon-on-insulator

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

High-Performance Atomic-Layer-Deposited Indium Oxide 3-D Transistors and Integrated Circuits for Monolithic 3-D Integration

Probing and Manipulating the Interfacial Defects of InGaAs Dual-Layer Metal Oxides at the Atomic Scale

Direct Observation of Early-stage Quantum Dot Growth Mechanisms with High-temperature Ab Initio Molecular Dynamics

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Study of High Indium InXGa1-XN Alloys with Synchrotron Radiation

Ab-Initio Study on Neutral Indium Diffusion in Uniaxial and Biaxial Strained Silicon Substrate

Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In2O3 and Application to High-Performance Field-Effect Transistors

Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process

Elemental Diffusion Study of Ge/Al2O3 and Ge/AlN/Al2O3 Interfaces Upon Post Deposition Annealing

Mapping the Identity of Transition Metal Doping and Surface Passivation in Indium Phosphide with Theoretical Calculation

Density functional theory simulations of amorphous high-κ oxides on a compound semiconductor alloy: a-Al2O3/InGaAs(100)-(4×2), a-HfO2/InGaAs(100)-(4×2), and a-ZrO2/InGaAs(100)-(4×2)