Abstract:Good quality epitaxial β-SiC growth on Si(001) substrates is conventionally obtained by various chemical vapour deposition process using the reaction of carbon and silicon-containing gases at high temperature (around 1300°C). We explore here an alternative route, at lower sample temperature, where SiC growth is obtained by molecular beam epitaxy evaporation of Si with C2H4 cracking on a surface held at 850°C. Preliminary IR analyses show the expected absorption band at 794 cm−1 of β-SiC with a damping coefficient of 0.02 close to the theoretical value (0.01). Moreover, cross-sectional transmission electron microscopy and in-situ X-ray photoelectron spectroscopy studies revealed the presence of elemental Si on the SiC surface, related to out-diffusion of Si atoms from the substrate. This on-top diffusion generates large pyramid-shaped defects in the substrate along 〈011〉 directions and contributes to the formation of strong SiC islands emerging above other SiC regions presenting more regular two-dimensional growth. High resolution figures obtained by zooming on these islands allows us to probe their local polycrystalline atomic structure. These defects are not characteristic of our growth process as they were observed previously using other growth methods. Investigations are under way to determine a growth procedure which suppresses the formation of these defects.

预沉积Ge对Si（111）衬底上SSMBE外延生长SiC薄膜的影响

Effect of predeposited ge on the growth of SiC films on Si(111) by SSMBE

Effect of Different Ge Predeposition Amounts on Sic Grown on Si (111)

Effect of Different Deposition Rates on the Growth of SiC on Si by SSMBE

Ge Deposited at Different Substrate Temperatures and Its Impact on SiC Films Growth

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Effects of Carbonization and Substrate Temperature on the Growth of 3c–sic on Si(111) by SSMBE

Effect of Different Si/C Flux Ratios on the Growth of Sic on Si (111) by Ssmbe

Study of Si and Ge growth on Si(100) surface

Effects of Substrate Temperature on Heteroepitaxial Growth of 3C-Sic Thin Films by Mbe on Si(111) Substrate

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Effect Of Si/C Flux Ratio On The Growth Of 3c-Sic On Si (111) By Ssmbe

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

Epitaxial Growth of 6H-Sic Thin Films on Α-Al2o3 Substrates by SSMBE

Influence of Sb as surfactant on Ge epitaxial growth on Si(001)

Study on 3C-Sic/si(111) by X-Ray Grazing Incident Diffraction

Observation of Si Out-Diffusion Related Defects in SiC Growth on Si(001)

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Growth of SiC Buffers for Strained Si Film Epitaxy

Island-growth of SiCGe films on SiC

Effects of Growth Temperature of Si Buffer Layer on Structure and Composition in Gesi Epitaxy Layers on Si Wafer