Abstract:Si films were grown on SiC (111) substrate by solid-source molecular beam epitaxy (SSMBE) at different Si/C flux ratios. The structure characteristics of SiC films were investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscope (AFM) and Fourier transform infrared spectroscope (FTIR). For the sample grown at Si/C flux ratio (1.1:1.0), ring patterns and twin spots are observed in RHEED and the full width at half maximum (FWHM) of the rocking curve is 2.1 degrees. For the sample grown at Si/C flux ratio(2.3:1.0), the Si spots coexist with SiC spots in the RHEED and the FWHM of the rocking curve is 1.5 degrees. For these two Si/C flux ratios, there are voids and rough surface observed in AFM and large strain exists shown in the FTIR spectra. However, for the sample grown at the Si/C flux ratio (1.5:1.0), besides SiC streaks, a (3x3) surface reconstruction can be observed in RHEED and no SiC twin spots are observed. The results of XRD show that the FWHM of the rocking curve is just 1.1 degrees. The AFM results indicate that the surface of the sample is even and there are no obvious voids. While the results of FTIR show that the strain in the film is small. Therefore, the optimized Si/C flux ratio is 1.5:1.0, and the quality of the film grown at the optimized Si/C flux ratio is the best.

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Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

The Growth of Si on Sic Complex Substrate by Cvd

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Growth of SiC Buffers for Strained Si Film Epitaxy

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

Study of Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Substrates by CVD

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The Growth of 3C-Sic on Si Substrate Using a SiCN Buffer Layer

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Heteroepitaxial 3C-Sic on Si (1 0 0) with Flow-Modulated Carbonization Process Conditions

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Effects of Growth Temperature of Si Buffer Layer on Structure and Composition in Gesi Epitaxy Layers on Si Wafer

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Microstructure and texture of polycrystalline 3C–SiC thick films characterized via EBSD

Optical and surface properties of 3C–SiC thin epitaxial films grown at different temperatures on 4H–SiC substrates

Fast Homoepitaxial Growth of 4H-Sic Films on 4° Off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System