Abstract:Silicon carbide (SiC) and aluminum nitride (AlN) thin films have been grown on 6HSiC(0001) substrates by gas-source molecular beam epitaxy (GSMBE) at 1050°C. Step flow, step bunching and the deposition of 6HSiC occurred at the outset of the exposure of the (1 × 1) vicinal substrate surface to C 2 H 4 Si 2 H 6 gas flow ratios of 1, 2 and 10. Subsequent deposition resulted in step flow and continued growth of 6H films or formation and coalescence of 3CSiC islands using the gas flow ratio of one or the ethylene-rich ratios, respectively. The (3 × 3) surface reconstruction observed using the former ratio is believed to enhance the diffusion lengths of the adatoms, which in turn promotes step flow growth. Essentially atomically flat monocrystalline AlN surfaces were obtained using on-axis substrates. Island-like features were observed on the vicinal surface. The coalescence of the latter features at steps gave rise to inversion domain boundaries (IDBs) as a result of the misalignment of the Si C bilayer steps with the AlN bilayers in the growing film. The quality of thicker AlN films is strongly influenced by the concentration of IDBs. Undoped, highly resistive (102 Ω · cm) and Mg-doped, p-type (0.3 Ω · cm) monocrystalline GaN films having a thickness of 0.4–0.5 μm have also been grown via the same technique on AlN buffer layers without post-processing annealing.

Epitaxial Growth of 6H-Sic Thin Films on Α-Al2o3 Substrates by SSMBE

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Single-crystalline 6H-Sic Heteroepitaxial Growth by Chemical Vapor Deposition on Sapphire Substrates at Reduced Temperatures

Controlled-Growth and Characterization of 3C-Sic and 6H-Sic Films on C-Plane Sapphire Substrates by Lpcvd

Effect of Substrate Temperature on the Growth of 6H-SiC Thin Films on Al_2O_3(0001) Surface

Effects of Substrate Temperature on Heteroepitaxial Growth of 3C-Sic Thin Films by Mbe on Si(111) Substrate

Homoepitaxial Growth of SiC Thin Film on 4H-SiC Substrate

Homoepitaxial 6H-Sic Thin Films by Vapor-Liquid-Solid Mechanism

Graphene Films Grown on Sapphire Substrates Via Solid Source Molecular Beam Epitaxy

Heteroepitaxial Growth of 3C-SiC on Si(111) by Solid Source Molecular Beam Epitaxy

Epitaxial growth and characterization of high-quality aluminum films on sapphire substrates by molecular beam epitaxy

Effects of Carbonization and Substrate Temperature on the Growth of 3c–sic on Si(111) by SSMBE

Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization

预沉积Ge对Si（111）衬底上SSMBE外延生长SiC薄膜的影响

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Growth of 3C-Sic Films on On-axis 6H-Sic Substrates by LPCVD

Effect of predeposited ge on the growth of SiC films on Si(111) by SSMBE

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Epitaxial Growth of Graphene on 6H-Sic (0001) by Thermal Annealing

Study on 3C-Sic/si(111) by X-Ray Grazing Incident Diffraction

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C