Abstract:To lower deposition temperature and reduce thermal mismatch induced stress, heteroepitaxial growth of single-crystalline 3C–SiC on 150mm Si wafers was investigated at 1000°C using alternating supply epitaxy. The growth was performed in a hot-wall low-pressure chemical vapor deposition reactor, with silane and acetylene being employed as precursors. To avoid contamination of Si substrate, the reactor was filled in with oxygen to grow silicon dioxide, and then this thin oxide layer was etched away by silane, followed by a carbonization step performed at 750°C before the temperature was ramped up to 1000°C to start the growth of SiC. Microstructure analyses demonstrated that single-crystalline 3C–SiC is epitaxially grown on Si substrate and the film quality is improved as thickness increases. The growth rate varied from 0.44 to 0.76 ±0.02nm/cycle by adjusting the supply volume of SiH4 and C2H2. The thickness nonuniformity across wafer was controlled with ±1%. For a prime grade 150mm virgin Si(100) wafer, the bow increased from 2.1 to 3.1μm after 960nm SiC film was deposited. The SiC films are naturally n type conductivity as characterized by the hot-probe technique.

Heteroepitaxial Growth of 3C-SiC on Si(111) by Solid Source Molecular Beam Epitaxy

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Study of Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Substrates by CVD

Epitaxial Growth of Multi-layer Graphene on the Substrate of Si(111)

Optical and surface properties of 3C–SiC thin epitaxial films grown at different temperatures on 4H–SiC substrates

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(111) substrates

The Growth of Si on Sic Complex Substrate by Cvd

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

The Growth of 3C-Sic on Si Substrate Using a SiCN Buffer Layer

Heteroepitaxial 3C-Sic on Si (1 0 0) with Flow-Modulated Carbonization Process Conditions

Cubic Mgxzn1-Xo Films Grown on Si(111)

Microstructure and texture of polycrystalline 3C–SiC thick films characterized via EBSD

Graphene films grown on Si substrate via direct deposition of solid-state carbon atoms

Fast Homoepitaxial Growth of 4H-Sic Films on 4° Off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Epitaxial Growth of Boron Carbide on 4H-SiC

Epitaxial Growth of Er2o3 Films on Si(001)

Si/CoSi/sub 2//si[100] Heteroepitaxial Growth by Molecular Beam Epitaxy and Novel Solid Phase Epitaxy