Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

Graphene films grown on Si substrate via direct deposition of solid-state carbon atoms

Epitaxial Growth of Multi-layer Graphene on the Substrate of Si(111)

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Growth and Characterization of Graphene on Sio2/Si Substrate

Graphene Films Grown on Sapphire Substrates Via Solid Source Molecular Beam Epitaxy

Direct growth of graphitic carbon on Si(111)

Graphene Grown on Sapphire Surface by Using SiC Buffer Layer with SSMBE

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Epitaxial Growth of Graphene on 6H-Sic (0001) by Thermal Annealing

Atomistic-Scale Simulations of the Graphene Growth on a Silicon Carbide Substrate Using Thermal Decomposition and Chemical Vapor Deposition

Epitaxial graphene growth on cubic silicon carbide on silicon with high temperature neutron reflectometry: an operando study

Synthesis of Graphene-Like Carbon Film on SiC Substrate

Graphene formed on SiC under various environments: Comparison of Si-face and C-face

The Growth of Si on Sic Complex Substrate by Cvd

New Insight into the Metal-Catalyst-Free Direct Chemical Vapor Deposition Growth of Graphene on Silicon Substrates

Large-area uniform graphene-like thin films grown by chemical vapor deposition directly on silicon nitride

Growth of atomically thick transition metal sulfide filmson graphene/6 H -SiC(0001) by molecular beam epitaxy

Electron-beam assisted selective growth of graphenic carbon thin films on SiO2/Si and quartz substrates

In situ atomic-scale observation of monolayer graphene growth from SiC

Low Temperature Growth of Graphene on Semiconductor