Abstract:To fabricate stable and high-quality graphene-silicon (Si) heterojunctions, it is of paramount importance to grow high-quality graphene on pristine Si surfaces directly and understand its growth mechanism. The performance of graphene-Si-based hybrid electronic/optoelectronic devices depends on the quality of such heterojunctions. Herein, we have carried out detailed density functional theory (DFT) and molecular dynamics (MD) simulation studies related to the metal-catalyst-free direct chemical vapor deposition (CVD) growth mechanism of graphene on the Si(100) surface, which is hardly reported to date. The DFT results suggest that the direct CVD growth of graphene on Si substrates is possible at high temperatures, and hydrogen passivation of Si surfaces does not affect the graphene growth. Moreover, X-ray photoelectron spectroscopy analyses of the direct thermal CVD-grown graphene on the Si(100) substrates reveal that the formation of silicon carbide (SiC) takes place even at 900 degrees C. This is in stark contrast to the results reported so far, where the graphene growth temperature exceeded 900 degrees C. It is concluded that high-temperature (>= 900 degrees C) direct CVD growth of graphene takes place on a self-limited thin SiC buffer layer instead of the actual Si substrate underneath, which is undesirable for fabrication of graphene-Si-based hybrid electronic/optoelectronic devices. Hence, high-temperature metal-catalyst-free direct growth of graphene on Si substrates using thermal CVD systems needs a revisit.

Direct growth of graphitic carbon on Si(111)

Graphene films grown on Si substrate via direct deposition of solid-state carbon atoms

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Direct Graphene Growth by Depositing Carbon Atoms on Si Substrate Covered by Sic Buffer Layers

Epitaxial Growth of Multi-layer Graphene on the Substrate of Si(111)

Direct Graphene Growth on Insulator

Resolving the Controversial Existence of Silicene and Germanene Nanosheets Grown on Graphite.

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Study of Si and Ge growth on Si(100) surface

Room-Temperature Growth of Al Films on Si(111)-7 7 Surface

Room-Temperature Growth Of Al Films On Si(111)-7x7 Surface

Growth of Ge quantum dots on SiO2/Si(111) surface

Synthesis of Ultra-Thin Carbon Layers on Sic Substrate by Ion Implantation

Direct Wafer-Scale CVD Graphene Growth under Platinum Thin-Films

Direct Growth of Graphene on SiO2 by Using Ga-Ni Flux

Growth mechanism for epitaxial graphene on vicinal 6H-SiC(0001) surfaces

In situ atomic-scale observation of monolayer graphene growth from SiC

Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition

New Insight into the Metal-Catalyst-Free Direct Chemical Vapor Deposition Growth of Graphene on Silicon Substrates

Electron-beam assisted selective growth of graphenic carbon thin films on SiO2/Si and quartz substrates

Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with Graphene–Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources