Abstract:Silicon carbide (SiC) and aluminum nitride (AlN) thin films have been grown on 6HSiC(0001) substrates by gas-source molecular beam epitaxy (GSMBE) at 1050°C. Step flow, step bunching and the deposition of 6HSiC occurred at the outset of the exposure of the (1 × 1) vicinal substrate surface to C 2 H 4 Si 2 H 6 gas flow ratios of 1, 2 and 10. Subsequent deposition resulted in step flow and continued growth of 6H films or formation and coalescence of 3CSiC islands using the gas flow ratio of one or the ethylene-rich ratios, respectively. The (3 × 3) surface reconstruction observed using the former ratio is believed to enhance the diffusion lengths of the adatoms, which in turn promotes step flow growth. Essentially atomically flat monocrystalline AlN surfaces were obtained using on-axis substrates. Island-like features were observed on the vicinal surface. The coalescence of the latter features at steps gave rise to inversion domain boundaries (IDBs) as a result of the misalignment of the Si C bilayer steps with the AlN bilayers in the growing film. The quality of thicker AlN films is strongly influenced by the concentration of IDBs. Undoped, highly resistive (102 Ω · cm) and Mg-doped, p-type (0.3 Ω · cm) monocrystalline GaN films having a thickness of 0.4–0.5 μm have also been grown via the same technique on AlN buffer layers without post-processing annealing.

Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with Graphene–Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Synthesis of silicon carbide in a matrix of graphite-like carbon prepared via carbonization of rigid-rod polyimide langmuir-blodgett films on silicon substrate

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

In situ atomic-scale observation of monolayer graphene growth from SiC

Synthesis of Ultra-Thin Carbon Layers on Sic Substrate by Ion Implantation

Epitaxial Growth of Multi-layer Graphene on the Substrate of Si(111)

Graphene Films Grown on Sapphire Substrates Via Solid Source Molecular Beam Epitaxy

Thickness-controlled Direct Growth of Nanographene and Nanographite Film on Non-Catalytic Substrates

Graphene films grown on Si substrate via direct deposition of solid-state carbon atoms

Morphological Features and Nanostructures Generated During SiC Graphitization Process

Silicon Carbide Nanowires Grown on Graphene Sheets

Synthesis, characterization and growth mechanism of SiC fibers

Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization

Growth of Large Domain Epitaxial Graphene on the C-Face of SiC

Growth and Morphology of One-Dimensional SiC Nanostructures Without Catalyst Assistant

Controlled growth of SiC crystals in combustion synthesis

Syntheses and Growth Mechanisms of 3C-Sic Nanostructures from Carbon and Silicon Powders.

Large-scale synthesis and characterization of hexagonal prism-shaped SiC nanowires.

Multi-length Scale Monte Carlo Simulation of the Growth Process of SiC Film by Chemical Vapor Deposition