Abstract:Direct chemical vapor deposition (CVD) of graphene on any desired substrate is always required to manufacture high-quality heterojunctions with excellent interfacial properties. Herein, the growth of graphene on cubic-silicon carbide (3C-SiC) surfaces using conventional high-temperature direct thermal CVD and plasma-enhanced CVD (PECVD) is explored, which is hardly reported to date. Since 3C-SiC substrates are not available, the controlled self-limited 3C-SiC layers on the Si(100) substrates were grown at different temperatures (900-1200 degrees C) via thermal-CVD technique to obtain virtual 3C-SiC substrates. The direct production of graphene via thermal CVD could not be achieved on such 3C-SiC surfaces. The density functional theory and molecular dynamics simulations confirm that the carbon atom diffusion over the 3C-SiC surface is extremely low, like over the Si surface, which leads to no graphene growth. A similar growth mechanism may be attributed to their similar crystal structure viz diamond cubic for Si and zinc blend for 3C-SiC. However, graphene nanowalls (GNWs) were successfully grown on both Si and 3CSiC/Si surfaces at 700 degrees C via the PECVD technique, where similar surface morphologies were observed because the growth mechanism of GNWs is independent of substrate type. Moreover, I-V characterization was performed for different SiC/Si heterostructures and their corresponding GNWs/SiC/Si heterostructures, respectively. The current conduction improved considerably more for GNW/SiC/Si heterostructures as compared to SiC/Si heterostructures, but the creation of a SiC interfacial layer as well as its quality affected the conductivity of GNWs/SiC/Si heterostructures. The inevitable formation of an interfacial SiC layer during the direct graphene growth via thermal CVD on Si substrates can seriously affect the performance of graphene/Si heterojunction devices. Hence, PECVD growth of graphene is an ideal option to fabricate graphene/Si heterojunction devices with excellent interfacial properties or graphene/3C-SiC/Si heterojunction devices for various electronic/optoelectronic applications such as gas sensors and photovoltaic devices.

Large-area uniform graphene-like thin films grown by chemical vapor deposition directly on silicon nitride

Metal‐Free Growth of Nanographene on Silicon Oxides for Transparent Conducting Applications

Wafer-Scale Graphene Growth on Si/SiO 2 Substrates via Metal-Free Chemical Vapor Deposition

Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/Siox by Chemical Vapor Deposition

Thickness-controlled Direct Growth of Nanographene and Nanographite Film on Non-Catalytic Substrates

Metal-Free Catalytic Preparation of Graphene Films on a Silicon Surface Using CO as a Carbon Source in Chemical Vapor Deposition

Catalyst-free synthesis of few-layer graphene films on silicon dioxide/Si substrates using ethylene glycol by chemical vapor deposition

Scalable and Direct Growth of Graphene Micro Ribbons on Dielectric Substrates

Non-vacuum growth of graphene films using solid carbon source

Growth of bilayer graphene on insulating substrates.

Chemical Vapor Deposition of Graphene on Self-Limited SiC Interfacial Layers Formed on Silicon Substrates for Heterojunction Devices

Direct growth of single-layer graphene on Ni surface manipulated by Si barrier

Ultrafast Growth of Uniform Multi-Layer Graphene Films Directly on Silicon Dioxide Substrates

Graphene films grown on Si substrate via direct deposition of solid-state carbon atoms

Direct Growth of Graphene Nanoribbons for Large-Scale Device Fabrication

Highly Uniform 300 mm Wafer-Scale Deposition of Single and Multilayered Chemically Derived Graphene Thin Films

Scalable templated growth of graphene nanoribbons on SiC

Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition

A Novel Method for Direct Growth of A Few-Layer Graphene on Al2o3 Film

Wafer-scale growth of two-dimensional graphitic carbon nitride films

Direct Wafer-Scale CVD Graphene Growth under Platinum Thin-Films