Abstract:Growing layer‐tunable and transfer‐free graphene films directly on device‐compatible substrates using ion implantation, fabricated photodetectors, field‐effect transistors, and heating devices. Direct synthesis of layer‐tunable and transfer‐free graphene on technologically important substrates is highly valued for various electronics and device applications. State of the art in the field is currently a two‐step process: a high‐quality graphene layer synthesis on metal substrate through chemical vapor deposition (CVD) followed by delicate layer transfer onto device‐relevant substrates. Here, we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual‐metal smart Janus substrate for a diffusion‐limiting graphene formation to directly synthesize large area, high quality, and layer‐tunable graphene films on arbitrary substrates without the post‐synthesis layer transfer process. Carbon (C) ion implantation was performed on Cu–Ni film deposited on a variety of device‐relevant substrates. A well‐controlled number of layers of graphene, primarily monolayer and bilayer, is precisely controlled by the equivalent fluence of the implanted C‐atoms (1 monolayer ~4 × 1015 C‐atoms/cm2). Upon thermal annealing to promote Cu‐Ni alloying, the pre‐implanted C‐atoms in the Ni layer are pushed toward the Ni/substrate interface by the top Cu layer due to the poor C‐solubility in Cu. As a result, the expelled C‐atoms precipitate into a graphene structure at the interface facilitated by the Cu‐like alloy catalysis. After removing the alloyed Cu‐like surface layer, the layer‐tunable graphene on the desired substrate is directly realized. The layer‐selectivity, high quality, and uniformity of the graphene films are not only confirmed with detailed characterizations using a suite of surface analysis techniques but more importantly are successfully demonstrated by the excellent properties and performance of several devices directly fabricated from these graphene films. Molecular dynamics (MD) simulations using the reactive force field (ReaxFF) were performed to elucidate the graphene formation mechanisms in this novel synthesis approach. With the wide use of ion implantation technology in the microelectronics industry, this novel graphene synthesis approach with precise layer‐tunability and transfer‐free processing has the promise to advance efficient graphene‐device manufacturing and expedite their versatile applications in many fields.

Catalyst-free synthesis of few-layer graphene films on silicon dioxide/Si substrates using ethylene glycol by chemical vapor deposition

Metal-Free Catalytic Preparation of Graphene Films on a Silicon Surface Using CO as a Carbon Source in Chemical Vapor Deposition

Ultrafast Growth of Uniform Multi-Layer Graphene Films Directly on Silicon Dioxide Substrates

CMOS-compatible catalytic growth of graphene on a silicon dioxide substrate

Wafer-Scale Graphene Growth on Si/SiO 2 Substrates via Metal-Free Chemical Vapor Deposition

Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition

Ultrafast Catalyst-Free Graphene Growth on Glass Assisted by Local Fluorine Supply

Novel Liquid Precursor-Based Facile Synthesis of Large-Area Continuous, Single, and Few-Layer Graphene Films

Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/Siox by Chemical Vapor Deposition

Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride

Graphene: Near‐Equilibrium Chemical Vapor Deposition of High‐Quality Single‐Crystal Graphene Directly on Various Dielectric Substrates (adv. Mater. 9/2014)

Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices.

Direct chemical vapor deposition of graphene on dielectric surfaces.

Direct synthesis of single-crystal bilayer graphene on various dielectric substrates

Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate

Large-area uniform graphene-like thin films grown by chemical vapor deposition directly on silicon nitride

Direct CVD Graphene Growth on Semiconductors and Dielectrics for Transfer‐Free Device Fabrication

Direct Synthesis of Layer‐Tunable and Transfer‐Free Graphene on Device‐Compatible Substrates Using Ion Implantation Toward Versatile Applications

Synthesis of Graphene-Like Carbon Film on SiC Substrate

Catalyst-free Growth of Single- to Few-Layered Graphene on Ionic Liquid Surfaces at Room Temperature

Chemical Vapor Deposition Growth of Large Grapheme Single Crystal from Ethanol