Catalyst-free Growth of Single- to Few-Layered Graphene on Ionic Liquid Surfaces at Room Temperature

Jiawei Shen,Cheng Gao,Xuheng Ye,Yi He,Xiangming Tao,Bo Yang,Miao Wang,Gaoxiang Ye

DOI: https://doi.org/10.1039/d1ce00411e

IF: 3.756

2021-01-01

CrystEngComm

Abstract:Single- to few-layered graphene is successfully fabricated on ionic liquid surfaces by a modified arc-discharge evaporation method without the assistance of catalysts and at room temperature.

What problem does this paper attempt to address?

Catalyst-free Growth of Single- to Few-Layered Graphene and Carbon Nanotubes on an Ionic Liquid Surface

Jiawei Shen,Yi He,Cheng Gao,Bo Yang,Xiangming Tao,Miao Wang,Gaoxiang Ye

DOI: https://doi.org/10.1016/j.colsurfa.2022.130025

IF: 5.518

2022-01-01

Colloids and Surfaces A Physicochemical and Engineering Aspects

Abstract:Carbon atoms can form many allotropes, which makes it as one of the most noticeable elements in the Periodic Table. Here, we report that single-to few-layered graphene, single-to multi-wall nanotubes and nested closed fullerenes may be fabricated on ionic liquid surfaces by a modified LP-CVD method without the assistance of metallic catalysts and near room temperature. The average size of the graphene platelets is about 300-500 nm, and the outer diameter of the single-wall carbon nanotube is 1.39 nm. The multi-wall nanotubes with semi-circular closed end and fullerenes were fabricated for the first time on the ionic liquid surfaces, and the inner diameters of both the nanotubes and fullerenes are on the order of several nanometers. Based on the experi-mental results, the growth mechanism of the allotropes of carbon is presented uniformly.
Catalyst-free synthesis of few-layer graphene films on silicon dioxide/Si substrates using ethylene glycol by chemical vapor deposition

Junjie Luo,Jing Wang,Feifei Xia,Xintang Huang

DOI: https://doi.org/10.1088/2053-1591/aaf491

IF: 2.025

2018-12-13

Materials Research Express

Abstract:Catalyst-free growth of graphene directly on dielectric substrates is a challenging work for graphene-based electronics. In this paper, a simple method to synthesize large area few layer graphene films on silicon dioxide/Si substrates by chemical vapor deposition is reported. A novel liquid carbon source (ethylene glycol) is used, without any catalysts. The obtained graphene films are characterized by Raman spectroscopy, x-ray photoelectron spectroscopy, atomic force microscopy. The field effect transistor with graphene film as channel material is fabricated, and the carrier mobility is 707 cm2 V−1.S–1. This work offers a new strategy to directly grow graphene on silicon dioxide/Si substrates, and the as-synthesized graphene films may have potential applications in sensors, conductive films, electronic devices, etc.

materials science, multidisciplinary
Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices.

Dacheng Wei,Yunhao Lu,Cheng Han,Tianchao Niu,Wei Chen,Andrew Thye Shen Wee

DOI: https://doi.org/10.1002/anie.201306086

2013-01-01

Angewandte Chemie International Edition

Abstract:Born at its final resting place: Moderate etching by a hydrogen plasma during plasma-enhanced chemical vapor deposition led to a critical equilibrium state of graphene edge growth in which graphene hexagonal single crystals or continuous graphene films were produced directly on dielectric substrates at 400 °C without a catalyst (see picture). The direct use of the resulting high-quality graphene in devices avoids troublesome transfer processes. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
Layer-by-layer Growth of Bilayer Graphene Single-Crystals Enabled by Proximity Catalytic Activity

Zhihong Zhang,Linwei Zhou,Zhaoxi Chen,Antonin Jaros,Miroslav Kolibal,Petr Babor,Quanzhen Zhang,Changlin Yan,Ruixi Qiao,Qing Zhang,Teng Zhang,Wei,Yi Cui,Jingsi Qiao,Liwei Liu,Lihong Bao,Haitao Yang,Zhihai Cheng,Yeliang Wang,Enge Wang,Zhi Liu,Marc Willinger,Hong-Jun Gao,Kaihui Liu,Wei Ji,Zhu-Jun Wang

DOI: https://doi.org/10.1016/j.nantod.2024.102482

IF: 17.4

2024-01-01

Nano Today

Abstract:Direct growth of large-area vertically stacked two-dimensional (2D) van der Waal (vdW) materials is a prerequisite for their high-end applications in integrated electronics, optoelectronics and photovoltaics. Currently, centimetre- to even metre-scale monolayers of single-crystal graphene (MLG) and hexagonal boron nitride (h-BN) have been achieved by epitaxial growth on various single-crystalline substrates. However, in principle, this success in monolayer epitaxy seems extremely difficult to be replicated to bi- or few-layer growth, as the full coverage of the first layer was believed to terminate the reactivity of those adopting catalytic metal surfaces. Here, we report an exceptional layer-by-layer chemical vapour deposition (CVD) growth of large size bi-layer graphene single-crystals, enabled by proximity catalytic activity from platinum (Pt) surfaces to the outermost graphene layers. In-situ growth and real-time surveillance experiments, under well-controlled environments, unambiguously verify that the growth does follow the layer-by-layer mode on open surfaces of MLG/Pt(111). First-principles calculations indicate that the transmittal of catalytic activity is allowed by an appreciable electronic hybridisation between graphene overlayers and Pt surfaces, enabling catalytic dissociation of hydrocarbons and subsequently direct graphitisation of their radicals on the outermost sp2 carbon surface. This proximity catalytic activity is also proven to be robust for tube-furnace CVD in fabricating single-crystalline graphene bi-, tri- and tetra-layers, as well as h-BN few-layers. Our findings offer an exceptional strategy for potential controllable, layer-by-layer and wafer-scale growth of vertically stacked few-layered 2D single crystals.
Growth of Few-Layer Graphene on SiC at Low Temperature with the Fluorocarbon Plasma Pre-Etching

Yijun Xu,Xuemei Wu,Chao Ye,Yanhong Deng,Tian Chen,Shuibing Ge

DOI: https://doi.org/10.1016/j.tsf.2012.12.013

IF: 2.1

2013-01-01

Thin Solid Films

Abstract:With the fluorocarbon plasma pre-etching silicon carbide (SiC), a method to prepare few-layer graphene at lower temperature (950°C) by thermal decomposition of SiC was developed. The graphene phase has been found by the X-ray photoelectron spectroscopy and Raman spectroscopy measurement. The planar sheet of carbon atoms was also observed by atomic force microscopy. The results demonstrate that few-layer graphene can form on SiC substrate at low temperature.
Layer-by-layer growth of bilayer graphene single-crystals enabled by self-transmitting catalytic activity

Zhihong Zhang,Linwei Zhou,Zhaoxi Chen,Antonín Jaroš,Miroslav Kolíbal,Petr Bábor,Quanzhen Zhang,Changlin Yan,Ruixi Qiao,Qing Zhang,Teng Zhang,Wei Wei,Yi Cui,Jingsi Qiao,Liwei Liu,Lihong Bao,Haitao Yang,Zhihai Cheng,Yeliang Wang,Enge Wang,Zhi Liu,Marc Willinger,Hong-Jun Gao,Kaihui Liu,Zhu-Jun Wang,Wei Ji

DOI: https://doi.org/10.48550/arXiv.2205.01468

2022-05-03

Abstract:Direct growth of large-area vertically stacked two-dimensional (2D) van der Waal (vdW) materials is a prerequisite for their high-end applications in integrated electronics, optoelectronics and photovoltaics. Currently, centimetre- to even metre-scale monolayers of single-crystal graphene (MLG) and hexagonal boron nitride (h-BN) have been achieved by epitaxial growth on various single-crystalline substrates. However, in principle, this success in monolayer epitaxy seems extremely difficult to be replicated to bi- or few-layer growth, as the full coverage of the first layer was believed to terminate the reactivity of those adopting catalytic metal surfaces. Here, we report an exceptional layer-by-layer chemical vapour deposition (CVD) growth of large size bi-layer graphene single-crystals, enabled by self-transmitting catalytic activity from platinum (Pt) surfaces to the outermost graphene layers. In-situ growth and real-time surveillance experiments, under well-controlled environments, unambiguously verify that the growth does follow the layer-by-layer mode on open surfaces of MLG/Pt(111). First-principles calculations indicate that the transmittal of catalytic activity is allowed by an appreciable electronic hybridisation between graphene overlayers and Pt surfaces, enabling catalytic dissociation of hydrocarbons and subsequently direct graphitisation of their radicals on the outermost sp2 carbon surface. This self-transmitting catalytic activity is also proven to be robust for tube-furnace CVD in fabricating single-crystalline graphene bi-, tri- and tetra-layers, as well as h-BN few-layers. Our findings offer an exceptional strategy for potential controllable, layer-by-layer and wafer-scale growth of vertically stacked few-layered 2D single crystals.

Materials Science,Mesoscale and Nanoscale Physics
Catalyst‐Free Synthesis of Few‐Layer Graphdiyne Using a Microwave‐Induced Temperature Gradient at a Solid/Liquid Interface

Chen Yin,Jiaqiang Li,Tianran Li,Yue Yu,Ya Kong,Peng Gao,Hailin Peng,Lianming Tong,Jin Zhang

DOI: https://doi.org/10.1002/adfm.202001396

IF: 19

2020-01-01

Advanced Functional Materials

Abstract:Graphdiyne (GDY), a 2D carbon allotrope, is predicted to possess high carrier mobility and an intrinsic bandgap. However, the controlled synthesis of mono‐ or few‐layer GDY with good crystallinity remains challenging because of the instability of the monomers. Herein, a rapid and catalyst‐free synthetic method is presented for few‐layer GDY involving the use of a solid/liquid interface and a microwave‐induced temperature gradient. Sodium chloride, which can absorb microwave energy, is used as the solid substrate in a nonabsorbing solvent. A temperature gradient is formed at the solid/liquid interface under microwave irradiation, facilitating the cross‐coupling reaction of monomers at the solid surface and stabilizing the monomers in the bulk solution. Few‐layer GDY with an average thickness of less than 2 nm, a field‐effect mobility of 50.1 cm2 V−1 s−1, and p‐type characteristics is successfully obtained. This wet chemical approach may be extended to the synthesis of other few‐layered 2D materials with improved quality.
High Concentration Few-layer Graphene Sheets Obtained by Liquid Phase Exfoliation of Graphite in Ionic Liquid

Daniele Nuvoli,Luca Valentini,Valeria Alzari,Sergio Scognamillo,Silvia Bittolo Bon,Massimo Piccinini,Javier Illescas,Alberto Mariani

DOI: https://doi.org/10.1039/c0jm02461a

2010-10-28

Abstract:In the present work, the use of a commercial ionic liquid as a convenient solvent medium for graphite exfoliation in mild and easy conditions without any chemical modification is presented. To confirm the presence of few layer graphene, its dispersion was charachterized by Raman spectroscopy, atomic force miscroscopy and field emission electron microscopy. From the UV-Vis characterization, a graphene concentration as high as 2.543 mg/ml was obtained, which is the highest value reported so far in any solvent.

Materials Science,Mesoscale and Nanoscale Physics,Other Condensed Matter
Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride

Shujie Tang,Haomin Wang,Hui Shan Wang,Qiujuan Sun,Xiuyun Zhang,Chunxiao Cong,Hong Xie,Xiaoyu Liu,Xiaohao Zhou,Fuqiang Huang,Xiaoshuang Chen,Ting Yu,Feng Ding,Xiaoming Xie,Mianheng Jiang

DOI: https://doi.org/10.1038/ncomms7499

2015-03-10

Abstract:The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only ~1 nm with a growth rate of ~1 nm/min or less, the main reason is the lack of a catalyst. Here we show that silane, serving as a gaseous catalyst, is able to boost the graphene growth rate to ~1 um/min, thereby promoting graphene domains up to 20 um in size to be synthesized via chemical vapor deposition on hexagonal boron nitride. Hall measurements show that the mobility of the sample reaches 20,000 cm2/Vs at room temperature, which is among the best for CVD-grown graphene. Combining the advantages of both catalytic CVD and the ultra-flat dielectric substrate, gaseous catalyst-assisted CVD paves the way for synthesizing high-quality graphene for device applications while avoiding the transfer process.

Materials Science
Low-Temperature Growth of Graphene by Chemical Vapor Deposition Using Solid and Liquid Carbon Sources

Zhancheng Li,Ping Wu,Chenxi Wang,Xiaodong Fan,Wenhua Zhang,Xiaofang Zhai,Changgan Zeng,Zhenyu Li,Jinlong Yang,Jianguo Hou

DOI: https://doi.org/10.1021/nn200854p

IF: 17.1

2011-01-01

ACS Nano

Abstract:Graphene has attracted a lot of research interest owing to its exotic properties and a wide spectrum of potential applications. Chemical vapor deposition (CVD) from gaseous hydrocarbon sources has shown great promises for large-scale graphene growth. However, high growth temperature, typically 1000 °C, is required for such growth. Here we demonstrate a revised CVD route to grow graphene on Cu foils at low temperature, adopting solid and liquid hydrocarbon feedstocks. For solid PMMA and polystyrene precursors, centimeter-scale monolayer graphene films are synthesized at a growth temperature down to 400 °C. When benzene is used as the hydrocarbon source, monolayer graphene flakes with excellent quality are achieved at a growth temperature as low as 300 °C. The successful low-temperature growth can be qualitatively understood from the first principles calculations. Our work might pave a way to an undemanding route for economical and convenient graphene growth.
Scalable Synthesis of Bilayer Graphene at Ambient Temperature

Xiaolong Zhu,Zhikang Su,Ran Tan,Cunlan Guo,Xinping Ai,Jiangfeng Qian

DOI: https://doi.org/10.1021/jacs.4c00975

2024-03-06

Abstract:In this work, we develop for the first time a facile chemical lithiation-assisted exfoliation approach to the controllable and scalable preparation of bilayer graphene. Biphenyl lithium (Bp-Li), a strong reducing reagent, is selected to realize the spontaneous Li-intercalation into graphite at ambient temperature, forming lithium graphite intercalation compounds (Li-GICs). The potential of Bp-Li (0.11 V vs Li/Li+), which is just lower than the potential of stage-2 lithium intercalation (0.125 V), enables the precise lithiation of graphite to stage-2 Li-GICs (LiC12). Intriguingly, the exfoliation of LiC12 leads to the bilayer-favored production of graphene, giving a high selectivity of 78%. Furthermore, the mild intercalation-exfoliation procedure yields high-quality graphene with negligible structural deterioration. The obtained graphene exhibits ultralow defect density (ID/IG ∼ 0.14) and a considerably high C/O ratio (∼29.7), superior to most current state-of-the-art techniques. This simple and scalable strategy promotes the understanding of chemical Li-intercalation methods for preparing high-quality graphene and shows great potential for layer-controlled engineering.
Liquid Cu-Zn Catalyzed Growth of Graphene Single-crystals

Lin Li,Minghui Li,ruijie Zhang,Qing Zhang,Hang Li,Dechao Geng

DOI: https://doi.org/10.1039/d3nj03345g

IF: 3.3

2023-10-27

New Journal of Chemistry

Abstract:Chemical vapor deposition (CVD) method has been widely used for growing large-scale graphene film on metal substrate. Due to drawbacks of single metal substrates, alloy substrates have gradually attracted attention owing to the exceptional characteristics derived from different metals, making them an enticing choice. In this study, a novel liquid Cu-Zn alloy catalyst was introduced for the first time in the preparation of millimeter-sized, single-crystal monolayer graphene using the CVD approach. Notably, the graphene synthesized on the liquid Cu-Zn alloy catalyst exhibited distinct advantages in terms of size compared to graphene grown on the conventional liquid Cu catalyst. The introduction of Zn onto the liquid Cu surface effectively impedes the nucleation density of graphene on the alloy substrate, also resulting in increased graphene size. The uniformity of large-sized graphene's electrical properties was confirmed by 2D resistivity measurement and tests on field effect transistor (FET) devices. This work put forward to inspire the novel design of alloy catalysts and the synthesis of graphene film bearing desirable properties.

chemistry, multidisciplinary
Wafer-scale single-crystal monolayer graphene grown on sapphire substrate

Junzhu Li,Mingguang Chen,Abdus Samad,Haocong Dong,Avijeet Ray,Junwei Zhang,Xiaochuan Jiang,Udo Schwingenschlögl,Jari Domke,Cailing Chen,Yu Han,Torsten Fritz,Rodney S. Ruoff,Bo Tian,Xixiang Zhang

DOI: https://doi.org/10.1038/s41563-021-01174-1

IF: 41.2

2022-01-20

Nature Materials

Abstract:The growth of inch-scale high-quality graphene on insulating substrates is desirable for electronic and optoelectronic applications, but remains challenging due to the lack of metal catalysis. Here we demonstrate the wafer-scale synthesis of adlayer-free ultra-flat single-crystal monolayer graphene on sapphire substrates. We converted polycrystalline Cu foil placed on Al2O3(0001) into single-crystal Cu(111) film via annealing, and then achieved epitaxial growth of graphene at the interface between Cu(111) and Al2O3(0001) by multi-cycle plasma etching-assisted–chemical vapour deposition. Immersion in liquid nitrogen followed by rapid heating causes the Cu(111) film to bulge and peel off easily, while the graphene film remains on the sapphire substrate without degradation. Field-effect transistors fabricated on as-grown graphene exhibited good electronic transport properties with high carrier mobilities. This work breaks a bottleneck of synthesizing wafer-scale single-crystal monolayer graphene on insulating substrates and could contribute to next-generation graphene-based nanodevices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter
Growth of graphene from solid amorphous carbon: A new geometry for control carbon diffusion barrier

Anfeng Zhang,Li Wang,Zhenyu Wang,Rende Chen,Xiaoping Li,Yuanbing Wang,Aiying Wang

DOI: https://doi.org/10.1016/j.vacuum.2023.112106

IF: 4

2023-07-01

Vacuum

Abstract:As an alternative strategy to fabricate high-quality graphene over a large area, metal catalysis has been attempted at elevated temperatures with solid carbon sources. However, graphene was generally fabricated on the surface of metal catalysis layer using amorphous carbon as solid carbon sources. In this study, a thin Al2O3 barrier (1 nm) deposited on an amorphous-C/Ni bilayer stack is demonstrated to enable direct growth of few layer graphene (FLG) identified as 3–4 layers on substrate surface at 700 °C and 800 °C. Moreover, the obtained graphene shows a good transmittance (93%) under the light source of 550 nm. The findings provide a way to directly synthesis FLG on the required substrate at low temperature, which may dramatically broaden the applications range of graphene.

materials science, multidisciplinary,physics, applied
Graphene: Near‐Equilibrium Chemical Vapor Deposition of High‐Quality Single‐Crystal Graphene Directly on Various Dielectric Substrates (adv. Mater. 9/2014)

Jianyi Chen,Yunlong Guo,Lili Jiang,Zhiping Xu,Liping Huang,Yunzhou Xue,Dechao Geng,Bin Wu,Wenping Hu,Gui Yu,Yunqi Liu

DOI: https://doi.org/10.1002/adma.201470059

IF: 29.4

2014-01-01

Advanced Materials

Abstract:Via a small-carbon-flow, long-time, near-equilibrium chemical vapor deposition method, single-crystal graphene grains larger than 10 μm are grown directly on various dielectric substrates, successfully practicing the Chinese saying of (slow work yields a fine product). The high mobility, exceeding 5000 cm2 V−1 s−1, is comparable to that of metal-catalyzed graphene. Further details can be found in the article by Y. Liu and co-workers on page 1348.
Direct Formation of Wafer-Scale Single-Layer Graphene Films on the Rough Surface Substrate by PECVD

Liangchao Guo,Zhenyu Zhang,Hongyan Sun,Dan Dai,Junfeng Cui,Mingzheng Li,Yang Xu,Mingsheng Xu,Yuefeng Du,Nan Jiang,Feng Huang,Cheng-Te Lin

DOI: https://doi.org/10.1016/j.carbon.2017.12.023

IF: 10.9

2018-01-01

Carbon

Abstract:The technical advance of plasma enhanced chemical vapor deposition (PECVD) exhibits the potential to grow large-area high-quality graphene films at relatively low growth temperature, which is beneficial to the fabrication of graphene-based electronic devices/sensors and transparent electrode. However, it remains a challenge to overcome the degradation of graphene quality during growth by PECVD, due to the continuous bombardment of plasma ions on the catalyst surface. Herein, the combined techniques of PECVD and the growth of graphene underneath the catalyst layer were proposed. As a result, transfer-free single-layer graphene films with 2.5 inch in diameter on quartz substrate can be obtained with the growth temperature of 700 degrees C, which is 250 degrees C lower than that for graphene synthesis using thermal CVD. The graphene films prepared by our method show the ability to form on the rough surfaces with millimeter-scale grooves and have minimal surface contamination, compared to that of conventionally transferred CVD graphene. (C) 2017 Elsevier Ltd. All rights reserved.
Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride

Shujie Tang,Haomin Wang,Hui Shan Wang,Qiujuan Sun,Xiuyun Zhang,Chunxiao Cong,Hong Xie,Xiaoyu Liu,Xiaohao Zhou,Fuqiang Huang,Xiaoshuang Chen,Ting Yu,Feng Ding,Xiaoming Xie,Mianheng Jiang

DOI: https://doi.org/10.1038/ncomms7499

IF: 16.6

2015-01-01

Nature Communications

Abstract:The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only ~1 μm with a growth rate of ~1 nm min −1 or less, the main reason is the lack of a catalyst. Here we show that silane, serving as a gaseous catalyst, is able to boost the graphene growth rate to ~1 μm min −1 , thereby promoting graphene domains up to 20 μm in size to be synthesized via chemical vapour deposition (CVD) on hexagonal boron nitride ( h -BN). Hall measurements show that the mobility of the sample reaches 20,000 cm 2 V −1 s −1 at room temperature, which is among the best for CVD-grown graphene. Combining the advantages of both catalytic CVD and the ultra-flat dielectric substrate, gaseous catalyst-assisted CVD paves the way for synthesizing high-quality graphene for device applications while avoiding the transfer process.
Uniform Single-Layer Graphene Growth on Recyclable Tungsten Foils

Zhiyu Zou,Xiuju Song,Ke Chen,Qingqing Ji,Yanfeng Zhang,Zhongfan Liu

DOI: https://doi.org/10.1007/s12274-015-0727-9

2015-01-01

Abstract:To meet the rising demand of graphene in electronics and optoelectronics, developing an efficient synthesis strategy for effective control of the layer thickness is highly necessary. Herein, we report the synthesis of strictly single-layer graphene on the foil of an early transition metal, tungsten (W), via a simple chemical vapor deposition route. The cracking of hydrocarbons is facilitated by the catalytically active metal surface of W, while the subsequent two-dimensional growth is mediated by the carbide-forming ability within the underlying bulk, leading to the formation of uniform monolayer graphene. The as-grown graphene layers can be transferred onto target substrates rapidly through the recently developed electrochemical method, which also allows for reuse of the substrates at least five times without introducing quality deterioration. Moreover, considering the refractory nature of W foils, a complementary component of nickel is added, by means of which the growth temperature of graphene can be significantly reduced. In brief, a highly-efficient and low-cost synthesis route has been developed for the growth of graphene towards large-area uniformity, single-layer thickness and high crystalline quality.
Synthesis of Large-Area Single- to Few-Layered MoS2 on an Ionic Liquid Surface

Jiawei Shen,Yi He,Cheng Gao,Xiangming Tao,Bo Yang,Miao Wang,Gaoxiang Ye

DOI: https://doi.org/10.1021/acsami.2c22150

IF: 9.5

2023-01-01

ACS Applied Materials & Interfaces

Abstract:Large-area fabrication of transition metal dichalcogenides via environmentally friendly and efficient processes has been a long-standing issue in the field of two-dimensional (2D) materials. Here, we report that single- to few-layered MoS2 sheets with an average size of the order of micrometers have been successfully synthesized on an ionic liquid surface by a modified low-pressure chemical vapor deposition (LP-CVD) method without the assistance of catalysts. It is found that the MoS2 sheets grown on the liquid substrate exhibit a complete molecular crystal structure, which is confirmed by transmission electron microscopy (TEM), Raman spectroscopy, and photoluminescence (PL) spectroscopy measurements. The interlayer spacing does not change significantly with the increase of the MoS2 layers, corresponding to a layer-by-layer growth pattern. The growth mechanism of the MoS2 sheets is presented according to the experimental results. The work provides a new and simple method of preparing more molecular crystals on liquid substrates and will contribute to further research in this field.
Low Temperature Metal Free Growth of Graphene on Insulating Substrates by Plasma Assisted Chemical Vapor Deposition

R Muñoz,C Munuera,J I Martínez,J Azpeitia,C Gómez-Aleixandre,M García-Hernández

DOI: https://doi.org/10.1088/2053-1583/4/1/015009

Abstract:Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650°C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω·sq-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.

Catalyst-free Growth of Single- to Few-Layered Graphene on Ionic Liquid Surfaces at Room Temperature

Catalyst-free Growth of Single- to Few-Layered Graphene and Carbon Nanotubes on an Ionic Liquid Surface

Catalyst-free synthesis of few-layer graphene films on silicon dioxide/Si substrates using ethylene glycol by chemical vapor deposition

Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices.

Layer-by-layer Growth of Bilayer Graphene Single-Crystals Enabled by Proximity Catalytic Activity

Growth of Few-Layer Graphene on SiC at Low Temperature with the Fluorocarbon Plasma Pre-Etching

Layer-by-layer growth of bilayer graphene single-crystals enabled by self-transmitting catalytic activity

Catalyst‐Free Synthesis of Few‐Layer Graphdiyne Using a Microwave‐Induced Temperature Gradient at a Solid/Liquid Interface

High Concentration Few-layer Graphene Sheets Obtained by Liquid Phase Exfoliation of Graphite in Ionic Liquid

Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride

Low-Temperature Growth of Graphene by Chemical Vapor Deposition Using Solid and Liquid Carbon Sources

Scalable Synthesis of Bilayer Graphene at Ambient Temperature

Liquid Cu-Zn Catalyzed Growth of Graphene Single-crystals

Wafer-scale single-crystal monolayer graphene grown on sapphire substrate

Growth of graphene from solid amorphous carbon: A new geometry for control carbon diffusion barrier

Graphene: Near‐Equilibrium Chemical Vapor Deposition of High‐Quality Single‐Crystal Graphene Directly on Various Dielectric Substrates (adv. Mater. 9/2014)

Direct Formation of Wafer-Scale Single-Layer Graphene Films on the Rough Surface Substrate by PECVD

Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride

Uniform Single-Layer Graphene Growth on Recyclable Tungsten Foils

Synthesis of Large-Area Single- to Few-Layered MoS2 on an Ionic Liquid Surface

Low Temperature Metal Free Growth of Graphene on Insulating Substrates by Plasma Assisted Chemical Vapor Deposition