Abstract:Graphene has attracted great attention owing to its excellent physical and chemical properties and potential applications. Presently, we can grow large-scale single-crystal graphene on transition metal substrates, especially Cu(111) or CuNi(111) surfaces, using the chemical vapor deposition (CVD) method. To optimize graphene synthesis for large-scale production, understanding the growth mechanism at the atomic scale is critical. Herein, we summarize the theoretical studies on the roles of the metal substrate in graphene CVD growth and the related mechanisms. Firstly, the metal substrate catalyzes the carbon feedstock decomposition. The dissociation of CH4, absorption, and diffusion of active carbon species on various metal surfaces are discussed. Secondly, the substrate facilitates graphene nucleation with controllable nucleation density. The dissociation and diffusion of carbon atoms on the CuNi alloy surface with different Ni compositions are revealed. The metal substrate also catalyzes the growth of graphene by incorporating C atoms from the substrate into the edge of graphene and repairing possible defects. On the most used Cu(111), each armchair site on the edge of graphene is intended to be passivated by a Cu atom and lowers the barrier of incorporating C atoms into the graphene edge. The potential route of healing the defects during graphene CVD growth is summarized. Moreover, the substrate controls the orientation of the epitaxial graphene. The graphene edge-catalyst interaction is strong and is responsible for the orientation determination of a small graphene island in the early nucleation stage. There are three modes for graphene growth on metal substrate, i.e. embedded mode, step-attached mode and onterrace mode, and the preferred growth modes are not all alike but vary from metal to metal. On a soft metal like Cu(111), graphene tends to grow in step-attached or embedded modes and therefore has a fixed orientation relative to the metal crystal lattice. Finally, the formation of wrinkles and step bunches in graphene because of the difference in thermal expansion coefficients between graphene and the metal substrate is discussed. The large friction force and strong interaction between graphene and the substrate make it energetically unfavorable for the formation of wrinkles. Different from the formation of wrinkles, the main driving force behind metal surface step-bunching in CVD graphene growth, even in the absence of a compression strain is revealed. Although significant effort is still required to adequately understand graphene catalytic growth, these theoretical studies offer guidelines for experimental designs. Furthermore, we provide the key issues to be explored in the future.

Growth of graphene from solid amorphous carbon: A new geometry for control carbon diffusion barrier

Low-Temperature Growth of Graphene by Chemical Vapor Deposition Using Solid and Liquid Carbon Sources

Controlled Growth of Multilayer, Few-Layer, and Single-Layer Graphene on Metal Substrates

The Growth of Graphene on Ni–Cu Alloy Thin Films at a Low Temperature and Its Carbon Diffusion Mechanism

Roles of Transition Metal Substrates in Graphene Chemical Vapor Deposition Growth

Metal-Catalyzed Crystallization of Amorphous Carbon to Graphene

Epitaxial Growth of 6 In. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C Via Chemical Vapor Deposition

Synthesis of Multilayer Graphene with Controlled C Supply

Chemical Vapor Deposition Growth of Graphene using Other Hydrocarbon Sources

Toward Direct Growth of Ultra‐Flat Graphene

Growth of Large-Area Graphene Films from Metal-Carbon Melts

Low Temperature Growth of Graphene on Semiconductor

Regulating Top‐Surface Multilayer/Single‐Crystal Graphene Growth by “Gettering” Carbon Diffusion at Backside of the Copper Foil

Direct growth of single-layer graphene on Ni surface manipulated by Si barrier

Thickness-controlled Direct Growth of Nanographene and Nanographite Film on Non-Catalytic Substrates

Liquid Cu-Zn Catalyzed Growth of Graphene Single-crystals

Controlled Growth of Large-Area Monolayer Graphene on Ni (110) Facet: Insight from Molecular Dynamics Simulation

Controlling the Catalytic Synthesis of SiC Nanowires, Carbon Nanotubes, and Graphene from a Multilayer Film Precursor

Ultrafast Catalyst-Free Graphene Growth on Glass Assisted by Local Fluorine Supply

Transfer-Free CVD Growth of High-Quality Wafer-Scale Graphene at 300 °C for Device Mass Fabrication.

A Novel Method for Direct Growth of A Few-Layer Graphene on Al2o3 Film