Abstract:Direct chemical vapor deposition (CVD) of graphene on any desired substrate is always required to manufacture high-quality heterojunctions with excellent interfacial properties. Herein, the growth of graphene on cubic-silicon carbide (3C-SiC) surfaces using conventional high-temperature direct thermal CVD and plasma-enhanced CVD (PECVD) is explored, which is hardly reported to date. Since 3C-SiC substrates are not available, the controlled self-limited 3C-SiC layers on the Si(100) substrates were grown at different temperatures (900-1200 degrees C) via thermal-CVD technique to obtain virtual 3C-SiC substrates. The direct production of graphene via thermal CVD could not be achieved on such 3C-SiC surfaces. The density functional theory and molecular dynamics simulations confirm that the carbon atom diffusion over the 3C-SiC surface is extremely low, like over the Si surface, which leads to no graphene growth. A similar growth mechanism may be attributed to their similar crystal structure viz diamond cubic for Si and zinc blend for 3C-SiC. However, graphene nanowalls (GNWs) were successfully grown on both Si and 3CSiC/Si surfaces at 700 degrees C via the PECVD technique, where similar surface morphologies were observed because the growth mechanism of GNWs is independent of substrate type. Moreover, I-V characterization was performed for different SiC/Si heterostructures and their corresponding GNWs/SiC/Si heterostructures, respectively. The current conduction improved considerably more for GNW/SiC/Si heterostructures as compared to SiC/Si heterostructures, but the creation of a SiC interfacial layer as well as its quality affected the conductivity of GNWs/SiC/Si heterostructures. The inevitable formation of an interfacial SiC layer during the direct graphene growth via thermal CVD on Si substrates can seriously affect the performance of graphene/Si heterojunction devices. Hence, PECVD growth of graphene is an ideal option to fabricate graphene/Si heterojunction devices with excellent interfacial properties or graphene/3C-SiC/Si heterojunction devices for various electronic/optoelectronic applications such as gas sensors and photovoltaic devices.

Growth of Few-Layer Graphene on SiC at Low Temperature with the Fluorocarbon Plasma Pre-Etching

Few-layer Graphene Growth on 6H-Sic(0001) Surface at Low Temperature Via Ni-silicidation Reactions

Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices.

Low Temperature Growth of Graphene on Semiconductor

In situ atomic-scale observation of monolayer graphene growth from SiC

Low-Temperature Growth of Graphene by Chemical Vapor Deposition Using Solid and Liquid Carbon Sources

Low-temperature Exfoliation of Multilayer-Graphene Material from FeCl3 and CH3NO2 Co-Intercalated Graphite Compound.

Graphene formed on SiC under various environments: Comparison of Si-face and C-face

Gaseous Catalyst Assisted Growth of Graphene on Silicon Carbide for Quantum Hall Resistance Standard Device

Low Temperature Metal Free Growth of Graphene on Insulating Substrates by Plasma Assisted Chemical Vapor Deposition

Synthesis of Graphene-Like Carbon Film on SiC Substrate

Synthesis of Ultra-Thin Carbon Layers on Sic Substrate by Ion Implantation

Catalyst-free Growth of Single- to Few-Layered Graphene on Ionic Liquid Surfaces at Room Temperature

Growth and Characterization of Graphene on Sio2/Si Substrate

High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum

Epitaxial Growth of 6 In. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C Via Chemical Vapor Deposition

Growth of Large Domain Epitaxial Graphene on the C-Face of SiC

Epitaxial Growth of Multi-layer Graphene on the Substrate of Si(111)

Growth of few-layer graphene on sapphire substrates by directly depositing carbon atoms

Chemical Vapor Deposition of Graphene on Self-Limited SiC Interfacial Layers Formed on Silicon Substrates for Heterojunction Devices

Cold Wall CVD (CWCVD) in the Synthesis of Few Layered Graphene on Ni