Abstract:Transfer-free graphene growth via annealing-induced carbon segregation was investigated on a series of carbon/metal/silica layered samples prepared by sequential deposition of Ni from evaporation of Ni and amorphous carbon thin layers from carbon fiber threads on different silica substrates and further thermal treatments with different annealing times, in an attempt to clarify the evolution of carbon formation and its structural variation along with the segregation procedure. Raman and X-ray photoelectron spectroscopies were applied to analyze the microstructure and chemical composition of the generated graphene layer and the carbon microstructure in the depth direction of the metal layer with the aid of Ar-ion etching. The results revealed the annealing-time dependence of the generated graphene quality, possibly because of the competition between carbon diffusion and metal carbide formation/decomposition during annealing. Few-layer stacked graphene sheets with lower defect concentration and larger crystalline size could be grown with increasing annealing time (<1.5 h), while further extending the annealing time resulted in the pronounced formation of amorphous carbon. Similar results were obtained on different types of silica substrates, revealing that growth of graphene was conspicuously independent of the type of the silica substrate, despite a slight difference in the obtained graphene quality owing to a difference in the lattice microstructure and the surface defect. The in-depth understanding of the mechanism of graphitization helps further development of direct growth of high-quality graphene on insulating substrates for applications in electronic devices.

Few-layer Graphene Growth on 6H-Sic(0001) Surface at Low Temperature Via Ni-silicidation Reactions

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Growth of Few-Layer Graphene on SiC at Low Temperature with the Fluorocarbon Plasma Pre-Etching

Epitaxial Growth of Graphene on 6H-Sic (0001) by Thermal Annealing

Preparation of few-layer graphene by annealing Ni film with low carbon content deposited by direct current magnetron sputtering

Graphene formed on SiC under various environments: Comparison of Si-face and C-face

Carbon Flux Assisted Graphene Layer Growth on 6H-Sic(000-1) by Thermal Decomposition

Direct Graphene Growth by Depositing Carbon Atoms on Si Substrate Covered by Sic Buffer Layers

In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si

Solid-Phase Reaction of Ni with Amorphous SiGe Thin Film on SiO2

Synthesis of Ultra-Thin Carbon Layers on Sic Substrate by Ion Implantation

Silicide Formation by Furnace Annealing of Thin Si Films on Large-Grained Ni Substrates

Phase-controlled Synthesis of Nickel Silicide Nanostructures

High-quality, Single-Layered Epitaxial Graphene Fabricated on 6H-Sic (0001) by Flash Annealing in Pb Atmosphere and Mechanism.

Synthesizing graphenes directly on SiO2/Si in open environments by a dual flame method

Low Temperature Growth of Graphene on Semiconductor

Surface Evolution of Nano-Textured 4h–sic Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth

Direct Growth of Graphene on SiO2 by Using Ga-Ni Flux

Transfer-Free Layered Graphene on Silica via Segregation through a Nickel Film for Electronic Applications

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

Fast, wafer-scale growth of a nanometer-thick graphite film on Ni foil and its structural analysis