Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

Surface Evolution of Nano-Textured 4h–sic Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth

Morphological Features and Nanostructures Generated During SiC Graphitization Process

Study of Si and Ge growth on Si(100) surface

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Annealing Time Dependence of Morphology and Structure of Epitaxial Graphene on 6H-SiC(0001) Surface

Graphene formed on SiC under various environments: Comparison of Si-face and C-face

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

In situ atomic-scale observation of monolayer graphene growth from SiC

Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic

Controlled Growth of One-dimensional 3C–SiC nanostructures with stable morphology

Effect of Growth Rate on Morphology Evolution of 4H-Sic Thick Homoepitaxial Layers

Epitaxial Growth of Multi-layer Graphene on the Substrate of Si(111)

High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum

Effect of Deposition and Treatment Conditions on Growth of Nanometer Ptsi Heterostructure

Influence of the Etching Process on the Surface Morphology of 4H-Sic Substrate Used in the Epitaxial Graphene

Atomistic-Scale Simulations of the Graphene Growth on a Silicon Carbide Substrate Using Thermal Decomposition and Chemical Vapor Deposition

Direct Graphene Growth by Depositing Carbon Atoms on Si Substrate Covered by Sic Buffer Layers

Surface Control of AlN Single Crystal Growth on SiC Substrate

Nanofaceting of unit cells and temperature dependence of the surface reconstruction and morphology of Si(105) and (103)

Optical and surface properties of 3C–SiC thin epitaxial films grown at different temperatures on 4H–SiC substrates

Few-layer Graphene Growth on 6H-Sic(0001) Surface at Low Temperature Via Ni-silicidation Reactions