Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

Large-scale uniform bilayer graphene prepared by vacuum graphitization of 6H-SiC(0001) substrates

High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Morphological Features and Nanostructures Generated During SiC Graphitization Process

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

Preparation of Graphene on Different-Polarity 6H-Sic Substrates and the Study of Their Electronic Structures

Epitaxial Growth of Uniform Single-Layer and Bilayer Graphene with Assistance of Nitrogen Plasma

Graphene formed on SiC under various environments: Comparison of Si-face and C-face

Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/Siox by Chemical Vapor Deposition

In situ atomic-scale observation of monolayer graphene growth from SiC

Influence of Defects in SiC (0001) on Epitaxial Graphene

Synthesis of Ultra-Thin Carbon Layers on Sic Substrate by Ion Implantation

Tailoring the SiC surface - a morphology study on the epitaxial growth of graphene and its buffer layer

Growth of Large Domain Epitaxial Graphene on the C-Face of SiC

Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide

Fabrication and Characterization of Graphene Derived from SiC

Epitaxial Growth of Graphene on 6H-Sic (0001) by Thermal Annealing

Few-layer Graphene Growth on 6H-Sic(0001) Surface at Low Temperature Via Ni-silicidation Reactions

Preparation And Electrical Transport Properties Of Quasi Free Standing Bilayer Graphene On Sic (0001) Substrate By H Intercalation

Growth mechanism for epitaxial graphene on vicinal 6H-SiC(0001) surfaces

Annealing Time Dependence of Morphology and Structure of Epitaxial Graphene on 6H-SiC(0001) Surface