Abstract:The growth of graphene on silicon carbide on silicon offers a very attractive route towards novel wafer-scale photonic and electronic devices that are easy to fabricate and can be integrated in silicon manufacturing. Using a Ni/Cu catalyst for the epitaxial growth of graphene has been successful in the mitigation of the very defective nature of the underlying silicon carbide on silicon, leading to a consistent graphene coverage over large scales. A more detailed understanding of this growth mechanism is warranted in order to further optimise the catalyst composition, preferably via the use of operando characterization measurements. Here, we report in situ neutron reflectometry measurements of (Ni, Cu)/SiC films on silicon wafers, annealed from room temperature to 1100 °C, which initiates graphene formation at the buried (Ni, Cu)/SiC interface. Detailed modelling of the high temperature neutron reflectometry and corresponding scattering length density profiles yield insights into the distinct physical mechanisms within the different temperature regimes. The initially smooth solid metallic layers undergo intermixing and roughening transitions at relatively low temperatures below 500 °C, and then metal silicides begin to form above 600 °C from interfacial reactions with the SiC, releasing atomic carbon. At the highest temperature range of 600–1100 °C, the low neutron scattering length density at high temperature is consistent with a silicon-rich, liquid surface phase corresponding to molten nickel silicides and copper. This liquid catalyst layer promotes the liquid-phase epitaxial growth of a graphene layer by precipitating the excess carbon available at the SiC/metal interface.

Segregation Growth of Epitaxial Graphene Overlayers on Ni(111)

Segregation Growth of Graphene on Cu–Ni Alloy for Precise Layer Control

Characterization Of Graphene Grown On Bulk And Thin Film Nickel

Graphene segregated on Ni surfaces and transferred to insulators

Transfer-Free Layered Graphene on Silica via Segregation through a Nickel Film for Electronic Applications

Evolution of graphene growth on Cu and Ni studied by carbon isotope labeling

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Tight-binding Calculation of Growth Mechanism of Graphene on Ni(111) Surface

Universal Segregation Growth Approach to Wafer-Size Graphene from Non-Noble Metals

Different growth behaviors of ambient pressure chemical vapor deposition graphene on Ni(111) and Ni films: A scanning tunneling microscopy study

Segregated graphene: From controlled growth to photocatalytic paper-cutting electronics

Epitaxial (111) Films of Cu, Ni, and Cu$_xNi$_y$ on α-Al$_2$O$_3$(0001) for Graphene Growth by Chemical Vapor Deposition

Investigation of non-segregation graphene growth on Ni via isotope-labeled alcohol catalytic chemical vapor deposition.

Graphene Growth on a Pt(111) Substrate by Surface Segregation and Precipitation

Dynamic Observation of In-Plane H-Bn/graphene Heterostructures Growth on Ni(111)

Direct growth of single-layer graphene on Ni surface manipulated by Si barrier

Epitaxial graphene growth on cubic silicon carbide on silicon with high temperature neutron reflectometry: an operando study

A facile approach to direct growth of layer-tunable graphene on Ge substrate

High-quality Monolayer Graphene Synthesis on Pd Foils Via the Suppression of Multilayer Growth at Grain Boundaries.

Interfacial monolayer graphene growth on arbitrary substrate by nickel-assisted ion implantation

Fast, wafer-scale growth of a nanometer-thick graphite film on Ni foil and its structural analysis