Abstract:The growth of graphene on silicon carbide on silicon offers a very attractive route towards novel wafer-scale photonic and electronic devices that are easy to fabricate and can be integrated in silicon manufacturing. Using a Ni/Cu catalyst for the epitaxial growth of graphene has been successful in the mitigation of the very defective nature of the underlying silicon carbide on silicon, leading to a consistent graphene coverage over large scales. A more detailed understanding of this growth mechanism is warranted in order to further optimise the catalyst composition, preferably via the use of operando characterization measurements. Here, we report in situ neutron reflectometry measurements of (Ni, Cu)/SiC films on silicon wafers, annealed from room temperature to 1100 °C, which initiates graphene formation at the buried (Ni, Cu)/SiC interface. Detailed modelling of the high temperature neutron reflectometry and corresponding scattering length density profiles yield insights into the distinct physical mechanisms within the different temperature regimes. The initially smooth solid metallic layers undergo intermixing and roughening transitions at relatively low temperatures below 500 °C, and then metal silicides begin to form above 600 °C from interfacial reactions with the SiC, releasing atomic carbon. At the highest temperature range of 600–1100 °C, the low neutron scattering length density at high temperature is consistent with a silicon-rich, liquid surface phase corresponding to molten nickel silicides and copper. This liquid catalyst layer promotes the liquid-phase epitaxial growth of a graphene layer by precipitating the excess carbon available at the SiC/metal interface.

In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si

In-situ nanoscale characterization of composition and structure during formation of ultrathin nickel silicide

Few-layer Graphene Growth on 6H-Sic(0001) Surface at Low Temperature Via Ni-silicidation Reactions

In situ atomic-scale observation of monolayer graphene growth from SiC

Preparation of few-layer graphene by annealing Ni film with low carbon content deposited by direct current magnetron sputtering

Epitaxial graphene growth on cubic silicon carbide on silicon with high temperature neutron reflectometry: an operando study

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

Role of Precursor Carbides for Graphene Growth on Ni(111)

One-step Chemical Vapor Synthesis of Ni/graphene Nanocomposites with Excellent Electromagnetic and Electrocatalytic Properties

Phase-controlled Synthesis of Nickel Silicide Nanostructures

Atomic-scale silicidation of low resistivity Ni-Si system through in-situ TEM investigation

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

High-Quality Graphene Synthesis on Amorphous SiC Through A Rapid Thermal Treatment

In-situ characterization of ultrathin nickel silicides using 3D medium-energy ion scattering

Segregation Growth of Epitaxial Graphene Overlayers on Ni(111)

Epitaxial Growth of Multi-layer Graphene on the Substrate of Si(111)

Different growth behaviors of ambient pressure chemical vapor deposition graphene on Ni(111) and Ni films: A scanning tunneling microscopy study

Fast, wafer-scale growth of a nanometer-thick graphite film on Ni foil and its structural analysis

Graphene formed on SiC under various environments: Comparison of Si-face and C-face

Direct growth of single-layer graphene on Ni surface manipulated by Si barrier

Graphite nucleation on (Al, Si, Mg)-nitrides: Elucidating the chemical interactions and turbostratic structures in spheroidal graphite cast irons