Abstract:Graphene has attracted great attention owing to its excellent physical and chemical properties and potential applications. Presently, we can grow large-scale single-crystal graphene on transition metal substrates, especially Cu(111) or CuNi(111) surfaces, using the chemical vapor deposition (CVD) method. To optimize graphene synthesis for large-scale production, understanding the growth mechanism at the atomic scale is critical. Herein, we summarize the theoretical studies on the roles of the metal substrate in graphene CVD growth and the related mechanisms. Firstly, the metal substrate catalyzes the carbon feedstock decomposition. The dissociation of CH4, absorption, and diffusion of active carbon species on various metal surfaces are discussed. Secondly, the substrate facilitates graphene nucleation with controllable nucleation density. The dissociation and diffusion of carbon atoms on the CuNi alloy surface with different Ni compositions are revealed. The metal substrate also catalyzes the growth of graphene by incorporating C atoms from the substrate into the edge of graphene and repairing possible defects. On the most used Cu(111), each armchair site on the edge of graphene is intended to be passivated by a Cu atom and lowers the barrier of incorporating C atoms into the graphene edge. The potential route of healing the defects during graphene CVD growth is summarized. Moreover, the substrate controls the orientation of the epitaxial graphene. The graphene edge-catalyst interaction is strong and is responsible for the orientation determination of a small graphene island in the early nucleation stage. There are three modes for graphene growth on metal substrate, i.e. embedded mode, step-attached mode and onterrace mode, and the preferred growth modes are not all alike but vary from metal to metal. On a soft metal like Cu(111), graphene tends to grow in step-attached or embedded modes and therefore has a fixed orientation relative to the metal crystal lattice. Finally, the formation of wrinkles and step bunches in graphene because of the difference in thermal expansion coefficients between graphene and the metal substrate is discussed. The large friction force and strong interaction between graphene and the substrate make it energetically unfavorable for the formation of wrinkles. Different from the formation of wrinkles, the main driving force behind metal surface step-bunching in CVD graphene growth, even in the absence of a compression strain is revealed. Although significant effort is still required to adequately understand graphene catalytic growth, these theoretical studies offer guidelines for experimental designs. Furthermore, we provide the key issues to be explored in the future.

Role of Precursor Carbides for Graphene Growth on Ni(111)

Characterization Of Graphene Grown On Bulk And Thin Film Nickel

Formation of carbon clusters in the initial stage of chemical vapor deposition graphene growth on Ni(111) surface

Graphene Nucleation from Amorphous Nickel Carbides: QM/MD Studies on the Role of Subsurface Carbon Density

Roles of Transition Metal Substrates in Graphene Chemical Vapor Deposition Growth

Molecular Dynamics Simulation of the Effect of Nickel Transition Layer on the Deposition of Carbon Atoms and Graphene Growth on Cemented Carbide Surfaces

Tight-binding Calculation of Growth Mechanism of Graphene on Ni(111) Surface

Molecular Dynamics Simulation of Chemical Vapor Deposition Graphene Growth on Ni (111) Surface

Controlled Growth of Large-Area Monolayer Graphene on Ni (110) Facet: Insight from Molecular Dynamics Simulation

Carbon chains and graphene nucleus synthesized on Ni(111) surface

Different growth behaviors of ambient pressure chemical vapor deposition graphene on Ni(111) and Ni films: A scanning tunneling microscopy study

Large Scale Atomistic Simulation of Single-Layer Graphene Growth on Ni(111) Surface: Molecular Dynamics Simulation Based on a New Generation of Carbon-Metal Potential.

A Novel Preparation Method for Uniform Large-Area Graphene Films on Ni@Cu Substrate

Epitaxial graphene growth on cubic silicon carbide on silicon with high temperature neutron reflectometry: an operando study

Modulation of Surface Chemistry of Co on Ni(111) by Surface Graphene and Carbidic Carbon

How Low Nucleation Density of Graphene on CuNi Alloy is Achieved

The Role of the Catalytic Particle in the Growth of Carbon Nanotubes by Plasma Enhanced Chemical Vapor Deposition

First-Principles Investigations on the Adsorption and Diffusion of Carbon Atoms on the Surface and in the Subsurface of Co (111) Related to the Growth of Graphene

Precursor-mediated in Situ Growth of Hierarchical N-doped Graphene Nanofibers Confining Nickel Single Atoms for CO2 Electroreduction.

Operando atomic-scale study of graphene CVD growth at steps of polycrystalline nickel

Molecular dynamics simulation of effect of nickel transition layer on deposition of carbon atoms and graphene growth on cemented carbide surfaces