Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

Graphene Grown on Sapphire Surface by Using SiC Buffer Layer with SSMBE

Graphene Films Grown on Sapphire Substrates Via Solid Source Molecular Beam Epitaxy

Epitaxial Growth of Multi-layer Graphene on the Substrate of Si(111)

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Single- and Bi-Layer Graphene Grown on Sapphire by Molecular Beam Epitaxy

Graphene films grown on Si substrate via direct deposition of solid-state carbon atoms

Preparation of Graphene on Different-Polarity 6H-Sic Substrates and the Study of Their Electronic Structures

Growth of few-layer graphene on sapphire substrates by directly depositing carbon atoms

Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide

Fabrication and Characterization of Graphene Derived from SiC

Wafer-scale single-crystal monolayer graphene grown on sapphire substrate

In situ atomic-scale observation of monolayer graphene growth from SiC

Tailoring the SiC surface - a morphology study on the epitaxial growth of graphene and its buffer layer

Van Der Waals Epitaxy of SnS Film on Single Crystal Graphene Buffer Layer on Amorphous SiO2/Si

Epitaxial Growth of Graphene on 6H-Sic (0001) by Thermal Annealing

Growth of Large Domain Epitaxial Graphene on the C-Face of SiC

Layered Graphene Growth Directly on Sapphire Substrates for Applications

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Graphene Buffer Layer on SiC as a Release Layer for High-Quality Freestanding Semiconductor Membranes

Growth and Characterization of Graphene on Sio2/Si Substrate

High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum