Abstract:Although epitaxial growth of Si films on both surfaces of silicon wafer (epi-Si/Si-wafer/epi-Si) can be realized in foundry by means of mounting certain amounts of silicon wafers in a boat in commercial specialized chemical vapor deposition equipment (s-CVD), for its counterpart epi-SiC/Si-wafer/epi-SiC, neither is it readily realized in s-CVD, nor is it easily achieved in conventional chemical vapor deposition equipment (c-CVD) which is generally used for growth of 3C-SiC on single surface of silicon wafer (epi-SiC/Si-wafer). Since the growth of epi-SiC/Si-wafer/epi-SiC in one run is more efficient, and is anticipated, in this work, we demonstrated a facile method for growth of epi-SiC/Si-wafer/epi-SiC in c-CVD. The Si wafer was double-side polished and mounted in a suspension mode on the susceptor in the c-CVD chamber. It was found that homogeneous 3C-SiC(100) films were heteroepitaxially grown on both surfaces of the suspended Si(100) wafer simultaneously. The structural and electrical properties of the obtained 3C-SiC films on both surfaces were investigated by means of SEM, XRD, Raman and J-V measurements. Results showed that each film was uniform and continuous, with same trend of slight degradation from the inner to the outer region of the wafer. This indicated a possible way of making mass production of high quality 3C-SiC films on Si wafers in one run in c-CVD for the potential applications such as sensors, with working principle based on voltage drop difference of two back-to-back diodes on epi-SiC/Si-wafer/epi-SiC, or graphene growth from epi-SiC/Si-wafer/epi-SiC templates. © The Author(s) 2016. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. [DOI: 10.1149/2.0121701jss] All rights reserved.

Homoepitaxial 6H-Sic Thin Films by Vapor-Liquid-Solid Mechanism

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Homoepitaxial Growth of Multiple 4H-Sic Wafers Assembled in a Simple Holder Via Conventional Chemical Vapor Deposition

Epitaxial Growth of 6H-Sic Thin Films on Α-Al2o3 Substrates by SSMBE

Improvement of Fast Homoepitaxial Growth and Defect Reduction Techniques of Thick 4H-Sic Epilayers

Epitaxial Growth and Microstructure of Cubic Sic Films on Si Substrates

Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films

Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals

LPCVD Homoepitaxial Growth on Off-Axis Si-Face 4H-Sic(0001) Substrates

Growth Optimization and Applicability of Thick On-Axis SiC Layers Using Sublimation Epitaxy in Vacuum

Single-crystalline 6H-Sic Heteroepitaxial Growth by Chemical Vapor Deposition on Sapphire Substrates at Reduced Temperatures

Fast Homoepitaxial Growth of 4H-Sic Films on 4° Off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System

Microstructure of 6H-Sic Thin Films Grown on Si Via APCVD

Controlled-Growth and Characterization of 3C-Sic and 6H-Sic Films on C-Plane Sapphire Substrates by Lpcvd

Selection of Growth Monomers on the 4H-Sic (0001) Atomic Step Surfaces: from the First-Principles Calculations to Homo-Epitaxy Verification

Process Optimization for Homoepitaxial Growth of Thick 4H-Sic Films Via Hydrogen Chloride Chemical Vapor Deposition

Growth Mechanism and Dislocation Characterization of Silicon Carbide Epitaxial Films

Heteroepitaxial Growth and Characterization of 3C-Sic Films on Si Substrates Using Lpvcvd

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-Sic

Growth of 3C-Sic Films on On-axis 6H-Sic Substrates by LPCVD

A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-Sic Thin Films on Both Surfaces of Suspended Si Wafer by Conventional Chemical Vapor Deposition