Abstract:Silicon carbide (SiC) and aluminum nitride (AlN) thin films have been grown on 6HSiC(0001) substrates by gas-source molecular beam epitaxy (GSMBE) at 1050°C. Step flow, step bunching and the deposition of 6HSiC occurred at the outset of the exposure of the (1 × 1) vicinal substrate surface to C 2 H 4 Si 2 H 6 gas flow ratios of 1, 2 and 10. Subsequent deposition resulted in step flow and continued growth of 6H films or formation and coalescence of 3CSiC islands using the gas flow ratio of one or the ethylene-rich ratios, respectively. The (3 × 3) surface reconstruction observed using the former ratio is believed to enhance the diffusion lengths of the adatoms, which in turn promotes step flow growth. Essentially atomically flat monocrystalline AlN surfaces were obtained using on-axis substrates. Island-like features were observed on the vicinal surface. The coalescence of the latter features at steps gave rise to inversion domain boundaries (IDBs) as a result of the misalignment of the Si C bilayer steps with the AlN bilayers in the growing film. The quality of thicker AlN films is strongly influenced by the concentration of IDBs. Undoped, highly resistive (102 Ω · cm) and Mg-doped, p-type (0.3 Ω · cm) monocrystalline GaN films having a thickness of 0.4–0.5 μm have also been grown via the same technique on AlN buffer layers without post-processing annealing.

Growth Optimization and Applicability of Thick On-Axis SiC Layers Using Sublimation Epitaxy in Vacuum

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Improvement of Fast Homoepitaxial Growth and Defect Reduction Techniques of Thick 4H-Sic Epilayers

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor

1 Single domain 3 CSiC growth on off-oriented 4 H-SiC substrates

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

LPCVD Homoepitaxial Growth on Off-Axis Si-Face 4H-Sic(0001) Substrates

Single Domain 3C-Sic Growth on Off-Oriented 4H-Sic Substrates

Step-controlled epitaxial growth of SiC: High quality homoepitaxy

Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks

Homoepitaxial 6H-Sic Thin Films by Vapor-Liquid-Solid Mechanism

Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization

Doping And Growth Of Thin Si Epilayer And Sige By Uhv/Cvd

Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates

Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-Sic

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum

Single-crystalline 6H-Sic Heteroepitaxial Growth by Chemical Vapor Deposition on Sapphire Substrates at Reduced Temperatures