Homoepitaxial Growth of SiC Thin Film on 4H-SiC Substrate

Zhongliang Liu,KANG Chao-yang,TANG Jun,Pengshou Xu
DOI: https://doi.org/10.16553/j.cnki.issn1000-985x.2012.01.026
2012-01-01
Abstract:The SiC thin films were grown on 4H-SiC substrates at different substrate temperatures.The structure and crystalline quality of the SiC thin film were characterized by reflection high energy electron diffraction(RHEED),Raman scattering spectroscopy and scanning electron microscope(SEM).The results indicated that the SiC film with better crystalline quality was obtained at the substrate temperature of 1200℃.However the crystalline quality of the films fabricated at lower substrate temperature(1100 ℃) and higher substrate temperature(1300 ℃) were poorer.
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