Abstract:Si films were grown on SiC (111) substrate by solid-source molecular beam epitaxy (SSMBE) at different Si/C flux ratios. The structure characteristics of SiC films were investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscope (AFM) and Fourier transform infrared spectroscope (FTIR). For the sample grown at Si/C flux ratio (1.1:1.0), ring patterns and twin spots are observed in RHEED and the full width at half maximum (FWHM) of the rocking curve is 2.1 degrees. For the sample grown at Si/C flux ratio(2.3:1.0), the Si spots coexist with SiC spots in the RHEED and the FWHM of the rocking curve is 1.5 degrees. For these two Si/C flux ratios, there are voids and rough surface observed in AFM and large strain exists shown in the FTIR spectra. However, for the sample grown at the Si/C flux ratio (1.5:1.0), besides SiC streaks, a (3x3) surface reconstruction can be observed in RHEED and no SiC twin spots are observed. The results of XRD show that the FWHM of the rocking curve is just 1.1 degrees. The AFM results indicate that the surface of the sample is even and there are no obvious voids. While the results of FTIR show that the strain in the film is small. Therefore, the optimized Si/C flux ratio is 1.5:1.0, and the quality of the film grown at the optimized Si/C flux ratio is the best.

Effect Of Si/C Flux Ratio On The Growth Of 3c-Sic On Si (111) By Ssmbe

Effect of Different Si/C Flux Ratios on the Growth of Sic on Si (111) by Ssmbe

Effects of Carbonization and Substrate Temperature on the Growth of 3c–sic on Si(111) by SSMBE

Study on 3C-Sic/si(111) by X-Ray Grazing Incident Diffraction

Effect of Different Deposition Rates on the Growth of SiC on Si by SSMBE

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Effects of Substrate Temperature on Heteroepitaxial Growth of 3C-Sic Thin Films by Mbe on Si(111) Substrate

Heteroepitaxial Growth of 3C-SiC on Si(111) by Solid Source Molecular Beam Epitaxy

预沉积Ge对Si（111）衬底上SSMBE外延生长SiC薄膜的影响

Effect of Different Ge Predeposition Amounts on Sic Grown on Si (111)

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Heteroepitaxial Growth and Characterization of 3C-Sic Films on Si Substrates Using Lpvcvd

Surface structure of 3C‐SiC(111) grown on Si(111) surface by C 60 precursor

Effect of predeposited ge on the growth of SiC films on Si(111) by SSMBE

The Growth of Si on Sic Complex Substrate by Cvd

The Growth of 3C-Sic on Si Substrate Using a SiCN Buffer Layer

X-Ray Photoelectron Spectroscopy and Reflection High Energy Electron Diffraction of Epitaxial Growth Sic on Si(100) Using C-60 and Si

Optical and surface properties of 3C–SiC thin epitaxial films grown at different temperatures on 4H–SiC substrates

Heteroepitaxial 3C-Sic on Si (1 0 0) with Flow-Modulated Carbonization Process Conditions

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

Epitaxial Growth of Cubic Silicon Carbide on Silicon by Sublimation Method