Abstract:The crystal quality of silicon-carbide (SiC) films plays a very important role in experimental and device production, but there is little research on the deposition and annealing process at the atomic scale. Using molecular dynamics, we simulated the deposition of crystalline Si, C clusters on a rough-surfaced Si substrate followed by annealing and investigated the effect of incidence rate on film surface morphology, crystallization rate, surface roughness, incident atom distribution, density, and vacancies. The results showed that the surfaces became smoother with increasing incidence rate both before and after deposition, but the difference in surface roughness between film groups with different incidence rates decreased after annealing. After annealing, the film density increased with increasing cluster incidence rate, while the volume fraction of the vacancies and cavities simultaneously increased. The higher the cluster incidence rate during deposition, the deeper the distribution of incident atoms, and the more the mixing with substrate atoms. An interesting phenomenon was observed during the high-temperature relaxation phase of the annealing, when the crystallization rate increased, stabilized, and then decreased as the relaxation proceeded. This study is of great significance to better understanding the nanoscale annealing of thin film deposits and guiding SiC thin film generation experiments.

Effect of Different Deposition Rates on the Growth of SiC on Si by SSMBE

预沉积Ge对Si（111）衬底上SSMBE外延生长SiC薄膜的影响

Effect of Different Si/C Flux Ratios on the Growth of Sic on Si (111) by Ssmbe

Effect of predeposited ge on the growth of SiC films on Si(111) by SSMBE

Effects of Carbonization and Substrate Temperature on the Growth of 3c–sic on Si(111) by SSMBE

Effect Of Si/C Flux Ratio On The Growth Of 3c-Sic On Si (111) By Ssmbe

Effect of Different Ge Predeposition Amounts on Sic Grown on Si (111)

Effects of Substrate Temperature on Heteroepitaxial Growth of 3C-Sic Thin Films by Mbe on Si(111) Substrate

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Ge Deposited at Different Substrate Temperatures and Its Impact on SiC Films Growth

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

Effects of different incidence rates of carbon and silicon clusters on the surface properties of SiC films

Epitaxial Growth of 6H-Sic Thin Films on Α-Al2o3 Substrates by SSMBE

Deposition and Thermoelectric Properties of N-Doped SiC Thick Films

Study on 3C-Sic/si(111) by X-Ray Grazing Incident Diffraction

Heteroepitaxial Growth of 3C-SiC on Si(111) by Solid Source Molecular Beam Epitaxy

Characterization of a stoichiometric SiC film deposited on a thermally oxidized Si substrate

Study of Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Substrates by CVD

Epitaxial Growth of Multi-layer Graphene on the Substrate of Si(111)