Abstract:For high-performance and high-lifetime flexible and wearable electronic applications, a low-temperature posttreatment method is highly expected to enhance the device performance and repair the defects induced by the low-temperature fabrication process intrinsically. Particularly, if the method can repair the traces induced by the multiple cycles of bending or deforming, it would overcome current fatal obstacles and provide a vital solution to the rapid development of flexible electronics. In this work, we propose a method to apply low-temperature supercritical CO2 fluid with a dehydration function to improve or even restore the performance of flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). After the treatment, the a-IGZO TFT exhibits 3 times improvement drivability up to 0.24 mu A/mu m, a smaller subthreshold swing of 0.18 V dec(-1), a smaller V-th of 0.25 V, and a larger I-on/I-off ratio of 3.8 x 10(7). Additionally, the posttreated a-IGZO TFTs possess relatively good uniformity and reproducibility with an on-current standard deviation of 0.047 mu A/mu m, and the performance of the a-IGZO TFT after the treatment remains almost unchanged even after bending 2500 times at a bending radius of 5 mm. These characteristics are attributed to the improved quality of the channel and gate dielectric. It is worth noting that when this is applied to a flexible TFT-driven organic light-emitting diode lighting system, this treatment method can restore the performance of not only the TFT but also the lighting system, even after the system has been bent more than 600 times and has failed. To date, this is the first time that the bending-track erasing function of the supercritical fluid for flexible systems has been reported, which has the potential to prolong the lifetime of flexible electronics.

Supercritical Fluid of Amorphous-silicon Flexible Thin-film Transistors

Performance Enhancement And Bending Restoration For Flexible Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors By Low-Temperature Supercritical Dehydration Treatment

Supercritical Ammoniation-Enabled Interfacial Polarization for Function-Mode Transformation and Overall Optimization of Thin-Film Transistors

Implementing Room‐Temperature Fabrication of Flexible Amorphous Sn–Si–O TFTs via Defect Control

Investigating the Effects of Sulfur Treatment on Material Characteristics and Resistance Switching Device Applications with Supercritical Fluid Technique

Application of SCF-LTDP technology for a-Si:H film defective passivation in X-ray PIN-based photosensor

Toward High Performance 4H-Sic MOSFETs Using Low Temperature Annealing Process with Supercritical Fluid

Performance Improvement of Low-Temperature Polycrystalline Silicon Thin-Film Transistors with Fluorinated Silicate Glass Drive-In Masking Layer

Introducing a supercritical fluid technique to reduce passivation layer interface defects in passivated emitter rear contact cells

Electrical performance of a-Si:H and poly-Si TFTs with heating stress

Advanced Low-Temperature–High-Pressure Hydrogen Treatment for Interface Defect Passivation in Si- and SiGe-Channel MOSCAPs

Supercritical Fluid Oxidation Methodology on A‐izao Thin‐Film Transistors

Low-Temperature-Processed Polycrystalline Silicon Thin-Film Transistors with Stable Solid-State Continuous-Wave Laser Crystallization

Improvement in Performance and Reliability with Cf4 Plasma Pretreatment on the Buffer Oxide Layer for Low-Temperature Polysilicon Thin-Film Transistor

High Performance Transparent In-Plane Silicon Nanowire Fin-Tfts Via A Robust Nano-Droplet-Scanning Crystallization Dynamics

Investigation of Supercritical Fluid Treatment for SiN/SiON/AlGaN/GaN MIS-HEMTs

Interface Optimization of 4H-Sic (0001) MOS Structures with Supercritical CO2 Fluid

Improvement mechanism of resistance random access memory with supercritical CO 2 fluid treatment

Improving Performance of All-Carbon-Nanotube Thin-Film Transistors by Low Temperature Supercritical CO2 Fluid Activation

Enhanced Electrical Stability of Thin Film Transistors Based on Nanocrystalline Silicon Films

A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid