Abstract:For high-performance and high-lifetime flexible and wearable electronic applications, a low-temperature posttreatment method is highly expected to enhance the device performance and repair the defects induced by the low-temperature fabrication process intrinsically. Particularly, if the method can repair the traces induced by the multiple cycles of bending or deforming, it would overcome current fatal obstacles and provide a vital solution to the rapid development of flexible electronics. In this work, we propose a method to apply low-temperature supercritical CO2 fluid with a dehydration function to improve or even restore the performance of flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). After the treatment, the a-IGZO TFT exhibits 3 times improvement drivability up to 0.24 mu A/mu m, a smaller subthreshold swing of 0.18 V dec(-1), a smaller V-th of 0.25 V, and a larger I-on/I-off ratio of 3.8 x 10(7). Additionally, the posttreated a-IGZO TFTs possess relatively good uniformity and reproducibility with an on-current standard deviation of 0.047 mu A/mu m, and the performance of the a-IGZO TFT after the treatment remains almost unchanged even after bending 2500 times at a bending radius of 5 mm. These characteristics are attributed to the improved quality of the channel and gate dielectric. It is worth noting that when this is applied to a flexible TFT-driven organic light-emitting diode lighting system, this treatment method can restore the performance of not only the TFT but also the lighting system, even after the system has been bent more than 600 times and has failed. To date, this is the first time that the bending-track erasing function of the supercritical fluid for flexible systems has been reported, which has the potential to prolong the lifetime of flexible electronics.

Improving Performance of All-Carbon-Nanotube Thin-Film Transistors by Low Temperature Supercritical CO2 Fluid Activation

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Performance Enhancement and Mechanism Exploration of All-Carbon-nanotube Memory with Hydroxylation and Dehydration Through Supercritical Carbon Dioxide

A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid

Supercritical Fluid Oxidation Methodology on A‐izao Thin‐Film Transistors

Ultra-Violet Light Enhanced Super Critical Fluid Treatment In In-Ga-Zn-O Thin Film Transistor

Improvement mechanism of resistance random access memory with supercritical CO 2 fluid treatment

Performance Enhancement Of Carbon Nanotube Thin Film Transistor By Yttrium Oxide Capping

Rapid Thermal Annealing for Carbon Nanotube Thin Film Transistors by a Double-Themral-region Furnace

Supercritical Ammoniation-Enabled Interfacial Polarization for Function-Mode Transformation and Overall Optimization of Thin-Film Transistors

Effects of Annealing Process on Characteristics of Fully Transparent Zinc Tin Oxide Thin-Film Transistor

On-current Tunable Carbon Nanotube Thin-Film Transistor by SiO2 Passivation Layer

Annealing Temperature Optimization for High-Performance Carbon Nanotube Thin Film Transistors

Enhanced reliability and uniformity for Ge pMOSFET with low temperature supercritical fluid treatment

Performance Enhancement And Bending Restoration For Flexible Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors By Low-Temperature Supercritical Dehydration Treatment

Rapid annealing and cooling induced surface cleaning of semiconducting carbon nanotubes for high-performance thin-film transistors

Ultraviolet/ozone and oxygen plasma treatments for improving the contact of carbon nanotube thin film transistors

Enhancing the Performance of Solution-Processed Thin-Film Transistors Via Laser Scanning Annealing

Order of magnitude improvement in the transport performance of carbon nanotube films by completely removing surfactants

Performance Enhancement of InGaZnO Top-Gate Thin Film Transistor With Low-Temperature High-Pressure Fluorine Treatment

Thermal Budget Reduction in Metal Oxide Thin-Film Transistors via Planarization Process