Abstract:High temperature passivating contacts for c-Si based solar cells are intensively studied because of their potential in boosting solar cell efficiency while being compatible with industrial processes at high temperatures. In this work, the hydrogenation mechanism of fired passivating contacts (FPC) based on c-Si/SiOx/nc-SiCx(p) stacks was investigated. More specifically, the correlation between passivation and local re-distribution of hydrogen resulting from the application of different types of interfacial oxides (SiOx) and post-hydrogenation processes was analyzed. To do so, the applied processing sequence was interrupted at different stages in order to characterize the samples. To assess the hydrogen content, deuterium was introduced (alongside/instead of hydrogen) and secondary ion mass spectroscopy (SIMS) was used for depth profiling. Combining these results with lifetime measurements, the key role played by hydrogen in the passivation of defects at the c-Si/SiOx interface is discussed. The SIMS profiles show that hydrogen almost completely effuses out of the SiCx(p) during firing, but can be re-introduced by hydrogenation via forming gas anneal (FGA) or by release from a hydrogen containing layer such as SiNx:H. A pile-up of H at the c-Si/SiOx interface was observed and identified as a key element in the FPC's passivation mechanism. Moreover, the samples hydrogenated with SiNx:H exhibited higher H content compared to those treated by FGA, resulting in higher iVOC values. Further investigations revealed that the doping of the SiCx layer does not affect the amount of interfacial defects passivated by the hydrogenation process presented in this work. Eventually, an effect of the oxide's nature on passivation quality is evidenced. iVOC values of up to 706 mV and 720 mV were reached with FPC test structures using chemical and UV-O3 tunneling oxides, respectively, and up to 739 mV using a reference passivation sample featuring a ~25 nm thick thermal oxide.

Advanced Low-Temperature–High-Pressure Hydrogen Treatment for Interface Defect Passivation in Si- and SiGe-Channel MOSCAPs

Defect Passivation and Reliability Enhancement by Low-Temperature-High-Pressure Hydrogenation in LDMOS With 0.13-μm Bipolar-CMOS-DMOS Technology

Improved Properties of Ge Mos Capacitors with Hftion or Hftio Gate Dielectric by Using Wet-No Ge-Surface Pretreatment

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Optimized Design of Si-cap Layer in Strained-Sige Channel P-Mosfets Based on Computational and Experimental Approaches

Preparation of High-Quality Gate Dielectrics for Ge MOSFET's in Wet Ambients

Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface

Analysis of hydrogen distribution and migration in fired passivating contacts (FPC)

Enhanced reliability and uniformity for Ge pMOSFET with low temperature supercritical fluid treatment

Enhancing gate turn-off thyristor blocking characteristics by low temperature defect passivation technology

Investigation of degradation mechanism after negative bias temperature stress in Si/SiGe channel metal–oxide–semiconductor capacitors induced by hydrogen diffusion

Ultralow Defect Density at Sub-0.5 Nm HfO2/SiGe Interfaces Via Selective Oxygen Scavenging

Atomic Layer Deposition of HfO2 Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs

Performance Enhancement of InGaZnO Top-Gate Thin Film Transistor With Low-Temperature High-Pressure Fluorine Treatment

Effect of Thermal Treatments on HfO2/In0.7Ga0.3As Metal-Oxide-Semiconductor Capacitor Characteristics

Supercritical Fluid of Amorphous-silicon Flexible Thin-film Transistors

Optimizing interface properties of HfO2/Si0.73Ge0.27 gate stacks through sulfur passivation and post-deposition annealing

Introducing a supercritical fluid technique to reduce passivation layer interface defects in passivated emitter rear contact cells

Improvement of Interface Properties for Thermally Oxidized SiC/SiO2 MOS Capacitor by Post Oxidation Annealing Treatment

Suppression of Hot-Electron-Induced Interface Degradation in Metal-Oxide-Semiconductor Devices by Backsurface Argon Bombardment