Abstract:Perovskites are semiconductor materials with the ABX3 structure, and they possess several attractive features, such as a tunable bandgap, high photoluminescence quantum yield (PLQY), charge mobility, and carrier lifetime. Hence, they are widely used in various applications, such as light-emitting devices, solar cells, and photosensors. However, the perovskite defects, including grain boundaries, vacancies, ion migration, and structural deformation, interfere with the effective performance of the perovskite-based devices. The intrinsic instability and trap states caused by the perovskite defects decrease the stability and performance of perovskite-based devices. Two methods of defect passivation are carried out to enhance the effectiveness of perovskite-based devices: (1) polymers and (2) chemical additives. Defect passivation protects the surface to increase stability and reduce trap states, thereby enhancing the performance of perovskite-based devices. This article reviews the technologies for defect passivation in perovskite-based devices. The effect of defect passivation has been analyzed using various methodologies: (1) surface analysis using atomic force microscopy (AFM) and scanning electron microscopy (SEM), (2) bandgap and charge carrier lifetime analysis using photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectra, (3) the trap-state density calculations based on the I–V curve under dark conditions, and (4) comparison of the critical parameters of the perovskite-based devices. This review provides an overview of the defect passivation technologies available to enhance the stability and applicability of perovskite-based photosensors.

Application of SCF-LTDP technology for a-Si:H film defective passivation in X-ray PIN-based photosensor

Defect Passivation in CH3NH3PbI3 Films Using Alkali Metal Fluoride Additives for Highly Efficient Perovskite Solar Cells

Improved temporal performance and optical quantum efficiency of avalanche amorphous selenium for low dose medical imaging

Supercritical Fluid of Amorphous-silicon Flexible Thin-film Transistors

Effective passivation via additive engineering based on CsPbBr3 films photodetectors and image sensor application

Introducing a supercritical fluid technique to reduce passivation layer interface defects in passivated emitter rear contact cells

Advanced Low-Temperature–High-Pressure Hydrogen Treatment for Interface Defect Passivation in Si- and SiGe-Channel MOSCAPs

PEAI Surface Treatment for Low Ion Migration and High-Performance FAPbBr 3 Single-Crystal X-ray Detectors

High resolution LAPS and SPIM

Investigation of Polycrystalline Silicon, Thin-Film Transistors Based Dynamic Flat Panel Detectors

PEAI Surface Treatment for Low Ion Migration and High-Performance FAPbBr3 Single-Crystal X-ray Detectors

Development of Robust Perovskite Single Crystal Radiation Detectors with High Spectral Resolution Through Synergetic Trap Deactivation and Self‐healing

Three-dimensional Fin-Shaped Dual-Gate Photosenstive A-Si:H Thin-Film Transistor for Low Dose X-ray Imaging

Highly Photosensitive Dual-Gate a-Si:H TFT and Array for Low-Dose Flat-Panel X-Ray Imaging

Silicon PIN Photodiode Applied to Acquire High-Frequency Sampling XAFS Spectra

Studies On Different Passivation On Inas/Gasb Type-Ii Superlattice Photodetectors

InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer

Electrode Engineering of Colloidal Quantum Dot Photodetectors Using a Self-Assembled Island-like LiF Interfacial Layer

A study of radiation damage and heat annealing effect on the irradiated 3T active pixel sensor

Trends in defect passivation technologies for perovskite-based photosensor

Photocarrier Transport Reconstruction and Dramatical Performance Enhancement in Ultrawide-Bandgap Ε-Ga2o3 Photodetectors Via Surface Defect Passivation