High resolution LAPS and SPIM

Li Chen,Yinglin Zhou,Shihong Jiang,Julia Kunze,Patrik Schmuki,Steffi Krause
DOI: https://doi.org/10.1016/j.elecom.2010.03.026
IF: 5.443
2010-01-01
Electrochemistry Communications
Abstract:The resolution of photocurrent measurements at field-effect capacitors as used in light-addressable potentiometric sensors (LAPS) and scanning photo-induced impedance microscopy (SPIM) has been investigated using silicon on sapphire (SOS) substrates illuminated at different wavelengths. Using a two-photon effect in silicon (λ=1250nm) to generate the photocurrent, genuine submicrometer resolution has been demonstrated for LAPS and SPIM. Improved sensitivity for both LAPS and SPIM was obtained using a 6.7nm thick gate oxide on SOS anodically grown in 0.1M HCl.
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