Abstract:A small indium flux was used as a surfactant during the growth of gallium nitride films by rf-plasma assisted molecular beam epitaxy. The effects of the indium surfactant on the optical and structural properties of undoped GaN were studied by photoluminescence spectroscopy, high-resolution X-ray diffraction, atomic force microscopy, Rutherford backscattering spectroscopy, and low-frequency noise. Photoluminescence spectra show that GaN thin films grown in the presence of In surfactant exhibit suppressed yellow luminescence compared to films grown under the same experimental conditions but without In surfactant. The X-ray rocking curves demonstrate a 20% decrease in the full width at half maximum value for the films grown with In surfactant. AFM studies show that the root mean squared roughness for films grown with and without In surfactant are 5.86 and 6.99 nm respectively, indicating significant improvement in surface morphology. RES and ion channeling shows the presence of stacking faults and dislocations in GaN grown with In surfactant and stacking faults in GaN grown without In. For the characterization of defect properties in the films we conducted detailed studies of l/f and Generation-Recombination (C-R) noise on our samples. About 65% reduction in the Hooge parameter was observed in the Film grown with In surfactant, indicative of a corresponding reduction in defect states within the material. For f > 500 Hz, G-R noise was the dominating fluctuation process. Detailed characterization of the G-R noise over a wide range of temperatures enabled the determination of the energy levels of the traps responsible for the G-R noise. Three different trap levels were observed using noise measurement technique. For films grown without In surfactant, traps with activation energies 806 meV, 241 meV and 100 meV were observed, whereas for samples grown with In surfactant traps were observed at 666 meV, 208 meV and 90 meV. Such systematic reduction in the energy levels of the traps may arise from the relaxation of strains in the material when grown under the application of In surfactant.

Effects and Mechanisms of in Surfactant on High Al-content AlGaN Grown by Plasma-Assisted Molecular Beam Epitaxy.

Effect of Indium Surfactant on the Optical and Structural Properties of MBE-grown GaN

Characterizations of GaN films grown with indium surfactant by RF-plasma assisted molecular beam epitaxy

The Effect of Indium Surfactant on the Optoelectronic and Structural Properties of MBE Grown Gallium Nitride

Enhanced performance of (112 ̄2) plane p-AlGaN grown with indium surfactant

SURFACTANT EFFECT OF In ON THE MOVPE GROWTH OF Al- AND N-POLAR AlN

Effects of indium surfactant on growth and characteristics of (112¯2) plane AlGaN-based multiple quantum wells

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Effects of in Surfactant on the Crystalline and Photoluminescence Properties of GaN Nanowires

Surfactant Antimony enhanced Indium incorporation on InGaN (000-1) surface: a DFT study

Growth of InGaN Films on C-Plane Sapphire Substrates with an AlN Nucleation Layer by Using Metal-Organic Chemical-Vapor Deposition

High Al-content AlInGaN Epilayers with Different Thicknesses Grown on GaN/sapphire Templates

Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Content InGaN Epilayers Grown by Metal–Organic Chemical Vapor Deposition

Effect of Indium Droplets on Growth of InGaN Film by Molecular Beam Epitaxy

Improved Crystal Quality of Gan Film with the In-Plane Lattice-Matched In0.17al0.83n Interlayer Grown on Sapphire Substrate Using Pulsed Metal Organic Chemical Vapor Deposition

Plasma Assisted Molecular Beam Epitaxy Growth Mechanism of AlGaN Epilayers and Strain Relaxation on AlN Templates

Improved Surface Morphology and Reduced V-Pits Density of Lattice-Matched Alinn Films Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition

Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

The Effect of Single AlGaN Interlayer on the Structural Properties of GaN Epilayers Grown on Si (111) Substrates

Gas-phase Parasitic Reactions and Al Incorporation Efficiency in Light Radiation Heating, Low-Pressure Metal–organic Chemical Vapor Deposition of AlGaN