Abstract:A new strategy based on atomic layer deposition and plasma fluorination is developed to fabricate high‐performance In2O3:F thin‐film transistors (TFTs) with remarkable bias‐stress stability. Density functional theory analysis reveals that the fluorine doping can stabilize the lattice oxygen and electrically passivate the VO defects in In2O3. The afforded In2O3:F TFTs are of high promise for the CMOS back‐end‐of‐line compatible applications. A low‐thermal‐budget fabrication approach is developed to realize high‐performance fluorine‐doped indium oxide (In2O3:F) thin‐film transistors (TFTs) with remarkable bias‐stress stability. The ultrathin transistor channel layer is prepared by a re‐developed atomic layer deposition (ALD) process of using cyclopentadienyl indium(I) (InCp) and O2 plasma to deposit a crystalline In2O3 film, followed by a new fluorine doping strategy to use CF4 plasma to afford the In2O3:F layer. As revealed by the density functional theory (DFT) analysis, the fluorine doping can stabilize the lattice oxygen and electrically passivate the problematic VO defects in In2O3 by forming the FOFi spectator defects. Therefore, the fabricated In2O3:F TFTs show simultaneously excellent electrical performance and remarkable bias‐stress stability, with high μFE of 35.9 cm2 V−1 s−1, positive Vth of 0.36 V, steep SS of 94.3 mV dec−1, small hysteresis of 33 mV, and small ΔVth of −111 and 49 mV under NBS and PBS, respectively. This work demonstrates the high promise of the fluorinated ALD In2O3:F TFTs for the CMOS back‐end‐of‐line (BEOL) compatible technologies toward advanced monolithic 3D integration.

P‐28: Novel Asymmetric Source‐drain Thin Film Transistors Fabricated by Atomic Layer Deposition

High-Performance Thin-Film Transistors with ZnO/Al2O3 Superlattice Channel Fabricated by Atomic Layer Deposition

P‐1.7: Atomic‐Layer‐Deposition Deposited Superlattice‐Structure Al‐Zn‐O Films for Thin Film Transistors Application

Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS = 2V)

High reliability amorphous oxide semiconductor thin-film transistors gated by buried thick aluminum

Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method

Influence of Source and Drain Electrodes on Device Performance of ZnO Thin Film Transistors

Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor with Source/Drain Regions Doped by Al Reaction

Sn-Doped Zno Thin-Film Transistors with Azo, Tzo and Al Heterojunction Source/Drain Contacts

First Demonstration of Highly Scaled Atomic Layer Deposited Ultrathin InSnZnO Channel Thin Film Transistor Exhibiting Superior Electrical Characteristics

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Fabrication of Schottky-Barrier-Oxide- Semiconductor Thin-Film Transistors Via a Simple Aluminum Reaction Method

Method for Fabricating Amorphous Indium-Zinc-Oxide Thin-Film Transistors with Copper Source and Drain Electrodes

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition

Dual Gate Indium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide Gate Dielectrics

37.3: Self‐Aligned Top‐Gate Amorphous ZnSnO Thin‐Film Transistor with Thermal‐Stable Al Reaction‐Doped Source/Drain

Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination

P-1.13: Influence of the Source/Drain Material on Oxide Semiconductor Thin Film Transistors

48.2: Invited Paper: High Conductivity & Transparent Aluminum‐based Multi‐layer Source/drain Electrodes for Thin Film Transistors