Abstract:In current work, InCaOx thin films with different Ca-doping concentrations were prepared via solution-processed method. A systematic investigation was conducted to reveal the variation in the physical properties of InCaOx thin films as a function of Ca-doping concentration by using various characteristic measurements. Results not only demonstrate that Ca-doping can change the optical properties, microstructure, and surface roughness of In2O3 thin films but also indicate that Ca-doping can effectively decrease oxygen vacancies in In2O3 thin films. By measuring the electrical properties of InCaOx/HfGdOx thin-film transistors (TFTs) at a low operating voltage of 5 V, it is noteworthy that Ca-doping can improve the deteriorated performance of In2O3/HfGdOx TFT caused by excessive oxygen vacancies. As Ca-doping concentration reaches 0.5%, InCaOx/HfGdOx TFT manifests superior performances, including a larger $mu _{text {FE}}$ of 15.1 cm2V−1s−1 and a higher ${I}_{ mathrm{scriptscriptstyle ON}}/{I}_{ mathrm{scriptscriptstyle OFF}}$ of $2.3times vphantom {{1}^{frac {{1}}{{2}}}},,10^{{7}}$ . Furthermore, the stability of In2O3/HfGdOx TFTs under positive bias stress is improved after Ca-doping. Finally, an inverter with a high gain of 6.0 is assembled on the basis of InCaOx/HfGdOx TFT. More importantly,-these excellent performances of InCaOx/HfGdOx TFTs are achieved at a low operating voltage, which marks a giant step toward the achievement of low cost and low power consumption electrical devices.

P-11: Effects of Calcium Doping on Zinc Oxide Thin Film Transistors

Effects of Substrate Temperature on Performance of Calcium-Doped Zinc Oxide Tfts

Achieving High-Performance Solution-Processed Thin-Film Transistors by Doping Strong Reducibility Element Into Indium-Zinc-Oxide

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Paper No P20: Effects of the Channel Thickness on Characteristics of Ga‐Doped Zinc Oxide Thin‐Film Transistors Fabricated on Glass

Titanium Doped Zinc Oxide Thin Film Transistors Fabricated by Cosputtering Technique

Fabrication optimization to improve performance of gallium-doped zinc oxide thin film transistors

Study of zinc tin oxide thin-film transistor

Effect of Al Doping on Performance of ZnO Thin Film Transistors

The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition

Performance Modulation in All-Solution-Driven InCaO x /HfGdO x Thin-Film Transistors and Exploration in Low-Voltage-Operated Logic Circuits

Influence of Ga Doping on Electrical Performance and Stability of ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

High-performance Ti-doped zinc oxide TFTs with double-layer gate dielectric fabricated at low temperature

Doping Effect of S2 Orbital Metal on Amorphous In-Zn-O and Its Application for Printable Transparent Thin-film Transistors (TFT)

Effects of various oxygen partial pressures on Ti-doped ZnO thin film transistors fabricated on flexible plastic substrate

Titanium doped Zinc-oxide based Thin Film Transistors: Optimization of the source/drain materials

P‐15: High‐Performance Fully Transparent Hafnium‐Doped Zinc Oxide TFTs Fabricated at Low Temperature

High-performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition at Low Temperature

Effect Of O-2 Incorporation During The Channel Fabrication Process On Aluminum-Doped Zinc Oxide Thin-Film Transistor Characteristics

Performance Enhancement of Fully Transparent Tin-Doped Zinc Oxide Thin-Film Transistors Fabricated by Sputtering at Low Temperature

Silicon Doping and N2 Annealing Effects on Zn3N2 Thin Film Transistors