Abstract:Amorphous InGaZnO semiconductors have been rapidly developed as active charge-transport materials in thin film transistors (TFTs) because of their cost effectiveness, flexibility, and homogeneous characteristics for large-area applications. Recently, InZnSnO (IZTO) with superior mobility (higher than 20 cm2 V-1 s-1) has been suggested as a promising oxide semiconductor material for high-resolution, large-area displays. However, the electrical and physical characteristics of IZTO have not been fully characterized. In this study, thin IZTO films were grown using a novel atomic layer deposition (ALD) supercycle process consisting of alternating subcycles of single-oxide deposition. By varying the number of deposition subcycles, it was determined that the insertion of a Sn-O cycle improved the mobility and reliability of IZTO-based TFTs. Specifically, the IZTO TFT obtained using one In-O cycle, one Zn-O cycle, and one Sn-O exhibited the best performance (saturation mobility of 27.8 cm2 V-1 s-1 and threshold voltage shift of 1.8 V after applying positive-bias temperature stress conditions). Next, the production of rollable and flexible devices was demonstrated by fabricating ALD-processed IZTO TFTs on polymer substrates. The electrical characteristics of these TFTs were retained without drastic degradation for 240,000 bending cycles. These results indicate that the supercycle ALD technique is effective for synthesizing multicomponent oxide TFTs for electronic applications requiring high mobility and mechanical flexibility.

Doping Effect of S2 Orbital Metal on Amorphous In-Zn-O and Its Application for Printable Transparent Thin-film Transistors (TFT)

Achieving High-Performance Solution-Processed Thin-Film Transistors by Doping Strong Reducibility Element Into Indium-Zinc-Oxide

Effect of Al Doping on Performance of ZnO Thin Film Transistors

Zirconium-aluminum co-doping on solution-processed indium oxide thin film and deceives measured by a novel nondestructive method

Fabrication of Transparent Indium Zinc Oxide Thin Film Transistors by Sol-gel Technology

Amorphous IZO-based transparent thin film transistors

High Performance Ti-Doped ZnO TFTs with AZO/TZO Heterojunction S/D Contacts

Amorphous zinc-doped indium oxide channel layers prepared by DC reactive magnetron sputtering

Design of InZnSnO Semiconductor Alloys Synthesized by Supercycle Atomic Layer Deposition and Their Rollable Applications

Performance Enhancement of Fully Transparent Tin-Doped Zinc Oxide Thin-Film Transistors Fabricated by Sputtering at Low Temperature

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

Al-Doped Zno Thin-Film Transistors on Flexible Plastic Substrate

Metal Reaction-Induced Bulk-Doping Effect in Forming Conductive Source-Drain Regions of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors.

High Performance of Y-doped Sn-Zn-O Films Fabricated by Solution-process for Amorphous Thin Film Transistors

Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications

Effect of Mg Content on Characteristics of Amorphous ZnMgSnO Thin-Film Transistors by a Combustion Solution Process

Performance enhancement of ATZO TFTs by component control and post treatment

Effects of Sn Doping on the Electrical Performance and Stability of Sub-V Operating Metal-Oxide Thin-Film Transistors Fabricated by Oxygen Annealing

High-performance fully transparent Ti-Zn-O thin film transistors

Effect of HfO2-Based Multi-Dielectrics on Electrical Properties of Amorphous In-Ga-Zn-O Thin Film Transistors

Bi2O3 Doped Indium Tin Oxide Thin Films Fabricated Via Liquid Metal Printing