Innovatively Composite Hard Mask to Feature Sub-30 Nm Gate Patterning
Lingkuan Meng,Chunlong Li,Xiaobin He,Jun Luo,Junfeng Li,Chao Zhao,Jiang Yan
DOI: https://doi.org/10.1016/j.mee.2014.02.010
IF: 2.3
2014-01-01
Microelectronic Engineering
Abstract:We presented an innovative composite alpha-Si/SiO2/Si3N4/SiO2 (alpha-Si/ONO) hard mask etching technology to produce sub-30 nm ultrafine gate patterns. Effects of process parameters, such as the CF4/CH2F2 flow ratio, 2 MHz LF power and O-2 flow, on etch rates of SiO2, Si3N4 and alpha-Si, and on the etch selectivities between SiO2, Si3N4 and alpha-Si, were studied using a capacitively coupled plasma (CCP) etcher. It can be observed that the line width of ONO hard mask closely relates to etch selectivities between SiO2 and Si3N4 to alpha-Si. Only at appropriate etch selectivities, does hard mask opening not exert significant impact on etching profile. In this case, a low line width roughness (LWR) value of 3.3 nm can be achieved.Ultrafine gate patterns that exhibit a smooth and steep etching profile with low LWR are accomplished successfully. Even if the line width is reduced from 29 nm to 22 nm by above 20%, the thickness of remaining ONO hard mask hardly changes. Consequently, the etching technology featuring alpha-Si/ONO hard mask developed in this work is capable to produce ultrafine gate patterns in the sub-30 nm technology nodes. (C) 2014 Elsevier B.V. All rights reserved.