Abstract:Fluorosilicate glasses are widely applied as optical and luminescent materials to host a variety of lanthanides. However, fluorides evaporation causes notable difference between the actual composition and the nominal composition of fluorosilicate glass. In this work, a series of SiO2 - Al2O3 - MF2 (M = Ca, Sr, Ba) glasses are fabricated, and quantitative element analysis is performed to determine the actual composition of the fluorosilicate glasses through an inductively coupled plasma atomic emission spectrometer (ICP-AES) and a gas chromatography analysis. A series of molecular dynamics (MD) simulations are carried out to study the glass network microstructures. The phase separation with silicate and fluoride phases is clearly observed in the MD simulated structures and agrees well with the observed self-crystallization of fluorides in the experiments. SiF4 as well as CaF2 / SrF2 / BaF2 are confirmed as the major evaporated substances from the glass melts. The phase separation may well inhibit the evaporation of SiF4 through partitioning Si4+ and F- ions into silicate phase and fluoride phase, respectively. The phase separation may enrich the alkaline earth cations into fluoride phase thus aggravate the evaporated loss of alkaline earth elements. This study is then help to understand the mechanism of fluoride evaporation from glass melts, and quantitatively predict actual composition of the fluorosilicate glasses.

The experimental study and analysis of the etching for SiO2 sacrificial layer

A Study On Etching Profiles Of Sacrificial Layers

The Effects of Diffusion Coefficient on the Etching Process of Sacrificial Oxide Layers

Etching Rate Of Sacriflcial Layer In Nanometer

Sacrificial layer etching in bubble structure

A Modified Model for Etching a Sacrificial Layer in Bubble Structures

Modified Model for Sacrificial Layer Etching

Modified Release-Etch Modeling for Complex Sacrificial Layer Structures

TDC Model for PSG Sacrificial Layer Etching with Hydrofluoric Acid

Study of Etching Rate with Sacrificial Layer's Thickness in Nanometer

Effect of annealing on etching profile of sacrificial layer and etching rate

Experimental Study on Evolution of Chemical Structure Defects and Secondary Contaminative Deposition during HF-Based Etching

Sacrificial Layer Etching Process in Joint Channels

Study on HF Vapor-Phase Etching for Suspended Nano Structure Fabrication

Optimization of Metal-Assisted Etchant Components for Fabrication of Porous Silicon

The wet-etching behaviors of the SiO2 layer in LiNbO3-on-insulator structure

A Sacrificial Layer Etching Method Applied in Surface Micromachining Using Agitated BHF and Glycerol Solution

Molecular Dynamics Simulation of Silicon Dioxide Etching by Hydrogen Fluoride Using the Reactive Force Field

Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release

Molecular Dynamics Study of Interaction between Fluorine Atoms and Silicon Surface

Phase Separation of Alkaline Earth Fluorosilicate Glass: A Strategy to Suppress Fluoride Evaporation