Abstract:The method established previously for studying the etching rates of micro-scale silicon and silica was used to study the etching process of silicon and silica on the Si(100) surface. Photolithography was used to pattern a positive photoresist mask to confine the etching area, and the atomic force microscopy was used to probe the etched surface. The lateral etching rate of silicon or silica on the silicon surface was defined, and the lateral and longitudinal etching rates of silicon and silica on the Si(100) surface in 40% ammonium fluoride aqueous solution were measured. The effect of the dissolved oxygen on the etching rates was studied by bubbling the solution with high purity nitrogen. The lateral and longitudinal etching rates of silicon and silica on the (100) surface increase with temperatures except for the lateral etching rate of silica in a N-2-bubbled solution which probably reaches the limit of diffusion controlled reaction. The etching rates of silicon and thermal silica on the Si(100) surface show remarkable difference with that on the Si (111) surface in both air-saturated and N-2-bubbled solutions. The apparent activation energies for the silicon and silica etching processing in ammonium fluoride solution were obtained from the etching rates at different temperatures in the range 20.6 similar to 34.1degreesC. The similarity of the apparent activation energies for the etching processing of silicon and silica on the (100) surface to that on the (111) surface probably suggests that the rate-determined-step is the same in both cases. A lot of gas bubbles are seen to aggregate on the surface in silicon dissolution process at 38.2degreesC, and it is found that the gas bubbles have great influence on the silicon etching rate. The formation of bubbles accelerates the silicon dissolution at the beginning but blocks the etching as the bubbles gradually aggregate on the surface.

The wet-etching behaviors of the SiO2 layer in LiNbO3-on-insulator structure

Isotropic Etch for SiO2 Microcantilever Release with ICP System

Advanced Etching Techniques of LiNbO3 Nanodevices

Nanometer-sized Etching of Lithium Niobate Domain Wall Devices

The Lateral and Longitudinal Etching Rates of Silicon and Silica on Si(100) Surface

Study on HF Vapor-Phase Etching for Suspended Nano Structure Fabrication

Study of Etching Rate with Sacrificial Layer's Thickness in Nanometer

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

The role of SiO2 buffer layer in the growth of highly textured LiNbO3 thin film upon SiO2/Si by pulsed laser deposition

A Parametric Study of ICP-RIE Etching on a Lithium Niobate Substrate

Molecular dynamics simulation of oxide-nitride bilayer etching with energetic fluorocarbon ions

In-situ Poling of Lithium Niobate Films on Silicon Wafer by Applying a Low Electric Field During Pulsed Laser Deposition

Etching selectivity of SiO 2 to SiN using HF and methanol at higher pressure up to 900 Pa

Highly C-axis oriented LiNbO3 thin film on amorphous SiO2 buffer layer and its growth mechanism

Fabrication and selective wet etching of Si0.2Ge0.8/Ge multilayer for Si0.2Ge0.8 channel gate-all-around MOSFETs

Pulsed Laser Deposition of C-Oriented Optical Waveguiding Bilayered Films on Silicon Wafers

Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H$_2$ and SF$_6$ plasmas

Research on Pt Nanoparticles-Assisted Chemical Etching of Heavily Doped p-Type Monocrystalline Silicon

Pulsed laser deposition of c-orientedLiNbO3LiTaO3 optical waveguiding bilayered films on silicon wafers

A Comprehensive Study of NF3-Based Selective Etching Processes: Application to the Fabrication of Vertically Stacked Horizontal Gate-All-around Si Nanosheet Transistors

Study on the layering phenomenon of SiC porous layer fabricated by constant current electrochemical etching