Abstract:Reactive ion etching (RIE) using fluorinated gases, such as admixtures of CF4 with O2, has been conducted on sputter deposited films of SiC. For comparison purposes, the same experiments with SiO2 films and Si wafers have been conducted. The influence of rf power, pressure, and O2 concentration on etch rate in CF4+O2, SF6+He, and Ar gases has been investigated. RIE mechanisms were studied using in situ monitoring of excited fluorine emission intensity and dc self-bias at the lower electrode. Typical etch rates of Si, SiO2, and SiC are 1220, 600, and 375 Å/min in CF4+4% O2; 8850, 500, and 560 Å/min in SF6+50% He; and 340, 280, and 270 Å/min in Ar, respectively, at P=200 W, p=20 mTorr, and 300 K. Under these conditions the dc self-bias levels are −396 V for CF4+4% O2, −350 V for SF6+50% He, and −414 V for Ar. In both CF4+4% O2 and SF6+50% He, the etch rates of Si, SiO2, and SiC all increase monotonically with the rf power. However, with increasing pressure the Si etch rate increases while the etch rates of SiO2 and SiC decrease. Since the dc self-bias varies proportionally with power and inversely with pressure, it is clear that the etching of Si is chemical reaction rate controlled. On the other hand, the etch rate of SiC depends on the ion bombardment energy and is thus dominantly controlled by a physical reaction. The SiC etch rate exhibits a weak dependence on O2 concentration in CF4+O2 mixtures. The dc self-bias is not affected by increasing O2 concentration, but the SiC etch rate is slightly enhanced. This suggests that a certain etching inhibitor layer exists on the surface of SiC, which can weakly react with the O2 plasma. Auger electron spectroscopy data indicates that this layer consists of carbon atoms.

Dry Etching of HfO2 and SiO2 Optical Thin Films

Isotropic Etch for SiO2 Microcantilever Release with ICP System

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived HfO2 Thin Films by TiO2 Incorporation

Alignment of Ferroelectric Liquid Crystal on Surface SiO2 Films on Oblique Ion Beam Deposition

Selective atomic layer etching of HfO2 over silicon by precursor and substrate-dependent selective deposition

Investigation of SiO2 Etch Characteristics by C6F6/Ar/O2 Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma

Reactive ion etching of SiC thin films using fluorinated gases

The Power Source Effect on SiOx Coating Deposition by Plasma Enhanced Chemical Vapor Deposition

Reactive ion etching of plasma enhanced chemical vapor deposition amorphous silicon and silicon nitride: Feeding gas effects

Temperature Dependence on Dry Etching of Hafnium Oxide Using an Inductively Coupled Plasma

Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry

SiO_2/Si Dry Etching with XeF_2

Low-damage etching of poly-Si and SiO 2 via a low-energy electron beam in inductively coupled CF 4 plasma

Atomic layer etching of SiO$_2$ using sequential exposures of Al(CH$_3$)$_3$ and H$_2$/SF$_6$ plasma

Surface quality and microstructure evolution in fused silica under SF 6 /Ar reactive ion beam etching

Dry Etching of TaN/HfO2 Gate Stack Structure by Cl2/SF6/Ar Inductively Coupled Plasma

A comparative study of Cx(x = 4, 5, 7)F8 plasmas for dry etch processing

Highly Selective Etch of Silicon Dioxide with Tungsten Hard Mask Deposited by PVD Process

Experimental Study of SiO2 Sputter Etching Process in 13.56 MHz Rf-Biased Inductively Coupled Plasma